A 120–140-GHz LNA in 250-nm InP HBT

Chauhan, Vikas; Collaert, N.; Wambacq, Piet

doi:10.1109/lmwc.2022.3189607

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…InP-based HBTs have been widely used in ultra-high-speed digital-to-analog hybrid circuits [1][2][3] and the mm and sub mm wave circuit designs [4][5][6] mainly due to the superior characteristics of high-frequency gain, high power density, low white noise, good linearity and so on. With the continuous improvement of application requirements, devices are continuously scaling down in size to increase frequency characteristics and meet the corresponding circuit speed.…”

Section: Introductionmentioning

confidence: 99%

Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs

Yan,

Lu,

Cheng

et al. 2023

Micromachines

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In this paper, the reliability of InP/InGaAs DHBTs under high reverse base–collector bias stress is analyzed by experiments and simulation. The DC characteristics and S parameters of the devices under different stress times were measured, and the key parameters with high field stress were also extracted to fully understand and analyze the high-field degradation mechanism of devices. The measurements indicate that the high-field stress leads to an increase in base current, an increase in base–collector (B–C) and base–emitter (B–E) junction leakage current, and a decrease in current gain, and different degrees of degradation of key parameters over stress time. The analysis reveals that the degradation caused by reverse high-field stress mainly occurs in the B–C junction, access resistance degradation, and passivation layer. The physical origins of these failure mechanisms have been studied based on TCAD simulation, and a physical model is proposed to explain the experimental results.

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Section: Introductionmentioning

confidence: 99%

Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs

Yan,

Lu,

Cheng

et al. 2023

Micromachines

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“…The unique location of terahertz waves has garnered significant interest among researchers, leading to extensive investigations into terahertz technology. Compared to light waves and millimeter waves, terahertz waves possess advantageous properties [1,2]. They exhibit better penetrability than light waves and offer more available bandwidth than millimeter waves.…”

Section: Introductionmentioning

confidence: 99%

A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

Hu,

Yang,

Fang

et al. 2023

Micromachines

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This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same time, the use of staggered tuning technology has achieved a large bandwidth of terahertz low-noise amplification. In addition, capacitors are used for interstage isolation, sector lines are used for RF bypass, and Microstrip is used to design matching circuits. The entire LNA circuit was validated using accurate electromagnetic simulation. The simulation results show that at 140 GHz, the small signal gain is 25 dB, the noise figure is 4.4 dB, the input 1 dB compression point is −19 dBm, and the 3 dB bandwidth reaches 60 GHz (110–170 GHz), which validates the effectiveness of the design.

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Radiation influence on planar reconfigurable field effect transistor low noise amplifier performance

2024

Phys. Scr.

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Many novel devices have been proposed in the literature to face the short channel effect and the reconfigurable FET (RFET) is one of them. The circuits based on new devices need to be investigated when they are introduced. This work has two parts: (i) designing cascoded RFET low noise amplifiers (LNA) and their performance analysis; and (ii) single-event performance analysis of RFET-LNAs. The designed LNA has a gain of 12 dB and a noise figure of 2.42 dB. The device in the common gate configuration mode is more susceptible to heavy ion radiation and collects more charge (QC) compared to the device in the common source configuration mode. Through temporal and frequency analysis, the irradiation disturbance is examined. In the temporal analysis, the collected charge (QC) is used as a metric, and the spectrogram is used in the frequency analysis.

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A 120–140-GHz LNA in 250-nm InP HBT

Cited by 5 publications

References 14 publications

Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs

Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs

A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

Radiation influence on planar reconfigurable field effect transistor low noise amplifier performance

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