A 125GHz LC-VCO in a SiGe:C Technology dedicated to mmW applications

Toupe, R.; Deval, Yann; Bégueret, Jean-Baptiste

doi:10.1109/bipol.2010.5668065

Cited by 4 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The phase noise performance of the local oscillator is one of the most critical bottlenecks in modern radio transceivers. Despite significant advances in recent years, achieving low-phase noise is still a significant challenge [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Phase noise analysis in CMOS differential Armstrong oscillator topology

Chlis

Pepe²,

Zito

2016

Circuit Theory & Apps

View full text Add to dashboard Cite

SUMMARYThis paper reports a phase noise analysis in a differential Armstrong oscillator circuit topology in CMOS technology. The analytical expressions of phase noise due to flicker and thermal noise sources are derived and validated by the results obtained through SpectreRF simulations for oscillation frequencies of 1, 10, and 100 GHz. The analysis captures well the phase noise of the oscillator topology and shows the impact of flicker noise contribution as the major effect leading to phase noise degradation in nano-scale CMOS LC oscillators.

show abstract

Section: Introductionmentioning

confidence: 99%

Phase noise analysis in CMOS differential Armstrong oscillator topology

Chlis

Pepe²,

Zito

2016

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

Fundamental mode colpitts VCOs at 115 and 165-GHz

Zhao

Heinemann

Pfeiffer

2011

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

View full text Add to dashboard Cite

Virtual technology for RF process and device development

Vanhoucke

Klaassen

Mertens

et al. 2011

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

View full text Add to dashboard Cite

The increasing complexity of modern technologies has made semiconductor process and device development challenging. A reduction in the number of experimental tests and a detailed internal insight opens the way to a more optimized process in a shorter time at reduced costs and development time. This has largely increased the use of virtual technology platforms for technology development and circuit optimization in e.g. RF BiCMOS applications. The capability of accurate predictions and directly linking basic technology parameters to RF circuit performance makes virtual technology a very powerful tool during RF process and device development. Commercially available technology computer-aided design (TCAD) tools are generally used during device fabrication and characterization, process optimization, and circuit design. With three examples we illustrate the evolution of the virtual technology process used for RF BiCMOS development within NXPSemiconductors. In the first two examples, we illustrate device and process optimization while in the third example we describe a new way of combining device and process optimization with circuit simulations by means of a distributed equivalent circuit. It allows to take the interaction between the intrinsic device (i.e. device doping profile) and the parasitic environment (i.e. device architecture) efficiently into account for high-frequency applications and in particular for low-noise circuits.

show abstract

A 125GHz LC-VCO in a SiGe:C Technology dedicated to mmW applications

Cited by 4 publications

References 8 publications

Phase noise analysis in CMOS differential Armstrong oscillator topology

Phase noise analysis in CMOS differential Armstrong oscillator topology

Fundamental mode colpitts VCOs at 115 and 165-GHz

Virtual technology for RF process and device development

Contact Info

Product

Resources

About