1999
DOI: 10.1109/4.799860
|View full text |Cite
|
Sign up to set email alerts
|

A 130-mm/sup 2/, 256-Mbit NAND flash with shallow trench isolation technology

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
4
0

Year Published

2006
2006
2020
2020

Publication Types

Select...
3
3
3

Relationship

0
9

Authors

Journals

citations
Cited by 24 publications
(4 citation statements)
references
References 6 publications
0
4
0
Order By: Relevance
“…As the storage capacity of flash increases, their latency behaviors get worse than before. Specifically, QLC flash [21] requires 2 ms for programming time, which is 10 × higher than an old SLC flash technology [12].…”
Section: Introductionmentioning
confidence: 99%
“…As the storage capacity of flash increases, their latency behaviors get worse than before. Specifically, QLC flash [21] requires 2 ms for programming time, which is 10 × higher than an old SLC flash technology [12].…”
Section: Introductionmentioning
confidence: 99%
“…Solid-state drives (SSDs) using NAND flash memories have been replacing hard-disk drives (HDDs) because of SSD's faster speed and higher density. [1][2][3][4][5][6] Figure 1 depicts the structure of NAND flash memory cells of the two-dimensional (2D) NAND flash. By applying the appropriate voltage to the control gates, select gates, and bit lines, read=write= erase operations are executed.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, in this work, 100% carrier capture efficiency (i.e., without the penetrating leakage current) is ensured using the slope derived from the incremental-step-pulse programming (ISPP). 8,9) By introducing the ISPP slope as an indicator of carrier capture efficiency, a reliable result has been obtained, that is, the charge centroid moves from the bottom of the charge layer toward the charge layer/block layer interface during avalanche injection. In addition, with the increase in applied electric field, the initial location of available traps shifts from the bottom to the top of the charge layer.…”
Section: Introductionmentioning
confidence: 99%