A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters

Abstract

This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz pushpush VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm 2 , and consumes 1.5 W.

A 24-GHz Wide-IF Down-Conversion Mixer Based on 0.13-μm RFCMOS Technology

“…최근 밀리미터파 영역의 넓은 대역을 활용한 Gbps급 무선 통신 시스템에 대한 연구가 활발히 진 행되고 있으며, 이에 따라 밀리미터파 영역에서 동 작하는 단일 칩 무선 송수신단이 개발되고 있다 [1], [2] .…”

“…이와 같은 방법으로 Reference [3] Reference [5] Reference [6] vol. 43,no. 2,Feb. 0.13-μm RFCMOS 공정 기반 24-GHz 광대역 하향 변환 혼합기…”

A sige-based 140-GHz four-channel radar sensor with digital beamforming capability

“…The authors of [2], for instance, presented a 65-nm CMOS 140 GHz RX with on-die antennas and an RX conversion gain below −30 dB. A SiGe-based double-sideband singlechip TRX was presented by the authors of [3]. They performed a first system-level operation with waveguides and horn antennas in an on-wafer setup at the probe station.…”

Broadband InP MMICs for 120 GHz wireless data communications

“…This figure includes results of transmission experiment using antennas. Device technology extends to CMOS [2-6, 12, 13], GaAs [7][8][9], InP [10,14], SiGe [11,13], and optical devices [15][16][17][18][19][20]. Short-distance wireless links less than several meters have already reached to 100-Gbps.…”