A 140-GHz monolithic low noise amplifier

Abstract

This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-pm pseudomorstage single-ended 140-GHz monolithic LNA has been designed, fabricated and tested. It exhibits a measured small signal gain of 9 dB at 142 GHz, and more than 5-dB gain from 138-145 GHz.This is the highest frequency monolithic amplifier ever reported using three terminal devices. phic IIIA~AS/L~G~ASLIIP low noise HEMT techn~log~. A two-

Stabilisation of Monolithic MM-Wave Amplifiers using Lossy Junctions

“…The shunt resistors both stabilised the circuit and eliminated the netd for large by-pass capacitors, but, at the same time, caused quite a high additional DC current consumption. The same approach was used in the design of the 142 GHz InP amplifier reported in [2]. A solution utilised in [3] for the 60 GHz CPW amplifier used bias networks with a shunt R-C circuit and a by-pass capacitor.…”

“…This was both due to the technological advantages (no need for very thin InP substrates or via-holes) and the circuit performance advantages (grounding without via-hole parasitics and small transmission line frequency dispersion). The circuit was designed for RF-on-wafer probing Our design approach was very similar to the one described in [1] and [2], although the technology used there utilised microstrip and waveguide test fixtures. Extensive characterisation and modelling of passive and active components was performed (2).…”

“…The circuit was designed for RF-on-wafer probing Our design approach was very similar to the one described in [1] and [2], although the technology used there utilised microstrip and waveguide test fixtures. Extensive characterisation and modelling of passive and active components was performed (2). The components were measured on-wafer in the V-and W-bands and physically meaningful models were carefully derived.…”

120-GHz-band Low-noise Amplifier with 14-ps Group-delay Variation for 10-Gbit/s Data Transmission

“…In wideband data transmission, an LNA needs both of low-noise performance and small group-delay variation in the occupied frequency band (OFB). Some LNAs with low-noise performance at over 100 GHz have been reported [3][4][5]. However, there has been no LNA designed in consideration of the need for small group-delay variation.…”

A 155-GHz monolithic InP-based HEMT amplifier

“…The PM HEMT devices using both GaAs and InP materials have demonstrated the high gain and low noise capability at W-band (75-1 10 GHz) and D-band (1 10-170 GHz) frequencies for hybrid integrated circuits [1]- [2]. The high gain low noise amplifiers have been successfully developed up to 140 GHz [3]- [6]. For the frequency above 120 GHz, InP-based HEMTs are superior to GaAs-based HEMTs for amplification due to the higher electron peak drift velocity in the InP based HEMT devices.…”