2008 IEEE International Electron Devices Meeting 2008
DOI: 10.1109/iedm.2008.4796784
|View full text |Cite
|
Sign up to set email alerts
|

A 145MHz low phase-noise capacitive silicon micromechanical oscillator

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
11
0

Year Published

2009
2009
2020
2020

Publication Types

Select...
7
3

Relationship

2
8

Authors

Journals

citations
Cited by 24 publications
(13 citation statements)
references
References 5 publications
1
11
0
Order By: Relevance
“…It can be observed that the induced nonlinearity in the test MEMS resonators produces a maximum performance improvement of 20 dB and 15 dB at an offset frequency of about 200 Hz for the IPS and LE modes, respectively. Note that the nonlinear IPS 23 MHz oscillator, with an absolute figure of at 1 kHz offset frequency, is comparable to architectures with highcapacitive resonators [40]. In addition, when compared with state-of-the-art piezoelectric devices at higher frequencies [41], the IPS mode oscillator can also satisfy the GSM standard (after frequency up-conversion) using a resonator with a of only 4000.…”
Section: F Application Of the Nonlinear Phase-noise Modelmentioning
confidence: 94%
“…It can be observed that the induced nonlinearity in the test MEMS resonators produces a maximum performance improvement of 20 dB and 15 dB at an offset frequency of about 200 Hz for the IPS and LE modes, respectively. Note that the nonlinear IPS 23 MHz oscillator, with an absolute figure of at 1 kHz offset frequency, is comparable to architectures with highcapacitive resonators [40]. In addition, when compared with state-of-the-art piezoelectric devices at higher frequencies [41], the IPS mode oscillator can also satisfy the GSM standard (after frequency up-conversion) using a resonator with a of only 4000.…”
Section: F Application Of the Nonlinear Phase-noise Modelmentioning
confidence: 94%
“…Motional resistance of a quadratic Si plate resonator oscillating in the contour mode (f 0 =1.31 MHz, Q=130000) is 4.47 k [23]. The resistance of a Si bulkmode resonator in the form of a disk (2.1 k, f 0 =24 MHz, Q=53000) [58] is of the same order of magnitude, as well as that of the 145 MHz resonator (2.4 k) [59]. Si bulk-mode resonators presented in [60] (f 0 =13 MHz, Q=10 5 ) and [61] (f 0 =60 MHz, Q=6200) have relatively small values of R m , amounting to 500  and 966 , respectively.…”
Section: Rf Mems Resonators -A Short Overview Of Existing Components mentioning
confidence: 94%
“…High-frequency and high-Q width-extensional mode SiBARs fabricated using the HARPSS process have shown atmospheric Q factors in excess of 10'000 at or above 100 MHz, with moderate motional resistances (Q-1000 Q) [1,2]. The resonance frequency of silicon micromechanical resonators is dependent on the physical dimensions of the resonating structure.…”
Section: Introductionmentioning
confidence: 98%