Post-Fabrication Electrical Trimming of Silicon Bulk Acoustic Resonators using Joule Heating

Samarao, Ashwin K.; Ayazi, Farrokh

doi:10.1109/memsys.2009.4805527

Cited by 19 publications

(6 citation statements)

References 10 publications

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“…Two equally strong peaks (IL ~ 31 dB) separated by 150 kHz with the same Q of 43k has been observed from a single SiBAR transduced at an offset of +11.5° from [110] axis of transduction and at a V p of 10 V (Figure 9). It is worth noting that achieving such small frequency separations with the same Q from an array of two micromechanical resonators is challenging otherwise due to the tolerance limits of microfabrication processes [6].…”

Section: Spurious Modes Betwee [110] a D [100] Axes Of Tra Sductiomentioning

confidence: 99%

Quality Factor Sensitivity to Crystallographic Axis Misalignment in Silicon Micromechanical Resonators

Samarao¹,

Ayazi²

2010

2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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We study the sensitivity of quality factor in single crystal silicon (SCS) micromechanical resonators to crystallographic axis misalignments that are present due to fabrication non-idealities. Our experimental results, being reported for the first time here, unveil that very small angular misalignment from [110] axis of transduction adversely affects the high Q of a bulk acoustic wave SCS resonator by more than 50%, unlike the misalignment errors about the [100] axis of transduction. Interestingly, when the axis of transduction is intentionally offset by a large angle from either [100] or [110], multiple peaks with comparable relative strength are observed from a single resonator.

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Section: Spurious Modes Betwee [110] a D [100] Axes Of Tra Sductiomentioning

confidence: 99%

Quality Factor Sensitivity to Crystallographic Axis Misalignment in Silicon Micromechanical Resonators

Samarao¹,

Ayazi²

2010

2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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“…As process variations in manufacturing and thermal drift may lead to variations and mismatch in the mechanical resonant frequencies, it is necessary to tune the frequencies of these resonators, as well as for applications like mechanical signal processing that will require signal tracking and frequency hopping [1]. Frequency tuning methods can be roughly divided into passive [2] and active [1], [3]- [6] methods. The active methods are able to maintain frequency matching through the lifetime of the device.…”

Section: Introductionmentioning

confidence: 99%

Active Frequency Tuning for Magnetically Actuated and Piezoresistively Sensed MEMS Resonators

Zhang

Zhao

Jiang

et al. 2013

IEEE Electron Device Lett.

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This letter, for the first time, reports an active frequency tuning for a magnetically actuated and piezoresistively sensed MicroElectroMechanical Systems resonator. Magnetic transduction is used to drive the device into the resonance. Piezoresistive transduction is used as resonance sensing technique and to tune the device's frequency by the Joule heating generated in the Wheatstone bridge without fabricating additional electrothermal heaters. The experiments are performed in air at room temperature and atmospheric pressure. The measurements shows that, by increasing the DC bias current of Wheatstone bridge from 0.5 to 5 mA, a maximum tuning range of −3403 ppm is achieved with a device resonating at 25.77 kHz.

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“…In this method by running a current through the structure, it is heated up resulting in a gold coating to diffuse into the resonator silicon structure. Upon cooling, the gold diffusion slightly increases the stiffness of the resonating structure, which results in an upward shift in resonance frequency [8]. This technique requires additional process steps to add the gold layer.…”

Section: Introductionmentioning

confidence: 99%

Self-Contained Frequency Trimming of Micromachined Silicon Resonators via Localized Thermal Oxidation

Hajjam

Pourkamali

2013

J. Microelectromech. Syst.

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An electronically controllable frequency trimming technique based on localized thermal oxidation of single crystalline silicon resonators is demonstrated. Thin layers of silicon dioxide can be thermally grown on silicon surfaces of resonant structures via extreme joule heating of such when biased with relatively large bias currents in an oxygen-rich environment. Changes in structural stiffness or oxidation induced internal stress causes a shift in the resonant frequency of the structures that can be used for post-fabrication frequency trimming of silicon resonators. As an added advantage, the positive temperature coefficient of Young's modulus for the added silicon dioxide layer can partially compensate the large negative temperature coefficient of frequency (TCF) for the silicon resonators. Frequency trimming as high as ∼3.7% and TCF as low as 0.2 ppm/°C has been demonstrated for a 54 MHz I-shaped resonator using this technique. Furthermore, it has been demonstrated that coupling of mechanical resonance to electrical resistance and consequently joule heating of the structure can lead to a cooling effect at mechanical resonant frequency of the structure that allows the localized oxidation to stop automatically as soon as the resonator frequency reaches a targeted actuation frequency applied to the structure. The viability of this concept is demonstrated by application of both off-resonance and at-resonance actuation signals to fabricated resonators showing that as opposed to the off-resonance signals, the at-resonance signals with the same intensity do not lead to further frequency shift.[2012-0337]

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Post-Fabrication Electrical Trimming of Silicon Bulk Acoustic Resonators using Joule Heating

Cited by 19 publications

References 10 publications

Quality Factor Sensitivity to Crystallographic Axis Misalignment in Silicon Micromechanical Resonators

Quality Factor Sensitivity to Crystallographic Axis Misalignment in Silicon Micromechanical Resonators

Active Frequency Tuning for Magnetically Actuated and Piezoresistively Sensed MEMS Resonators

Self-Contained Frequency Trimming of Micromachined Silicon Resonators via Localized Thermal Oxidation

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