A 16-Channel Analog CMOS SiPM With On-Chip Front-End for D-ToF LiDAR

Liu, Maliang; Liu, Bingzheng; Hu, Jin; Li, Dong; Ma, Jiaji; Chu, Zekun; Ma, Rui; Zhu, Zhangming

doi:10.1109/tcsi.2022.3160265

Cited by 17 publications

(2 citation statements)

References 23 publications

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“…of the signal at the SPAD level [33]. Therefore, future applications could be limited by CA which can be characterized by the methodology described in this paper.…”

Section: Jinst 19 T08003mentioning

confidence: 99%

Batch VUV4 characterization for the SBC-LAr10 scintillating bubble chamber

Hawley-Herrera,

Alfonso-Pita,

Behnke

et al. 2024

J. Inst.

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The Scintillating Bubble Chamber (SBC) collaboration purchased 32 Hamamatsu VUV4 silicon photomultipliers (SiPMs) for use in SBC-LAr10, a bubble chamber containing 10 kg of liquid argon. A dark-count characterization technique, which avoids the use of a single-photon source, was used at two temperatures to measure the VUV4 SiPMs breakdown voltage (VBD), the SiPM gain (g SiPM), the rate of change of g SiPM with respect to voltage (m), the dark count rate (DCR), and the probability of a correlated avalanche (PCA) as well as the temperature coefficients of these parameters. A Peltier-based chilled vacuum chamber was developed at Queen's University to cool down the Quads to 233.15 ± 0.2 K and 255.15 ± 0.2 K with average stability of ±20 mK. An analysis framework was developed to estimate VBD to tens of mV precision and DCR close to Poissonian error. The temperature dependence of VBD was found to be 56 ± 2 mV K-1, and m on average across all Quads was found to be (459 ± 3(stat.)±23(sys.))× 103 e- PE-1 V-1. The average DCR temperature coefficient was estimated to be 0.099 ± 0.008 K-1 corresponding to a reduction factor of 7 for every 20 K drop in temperature. The average temperature dependence of PCA was estimated to be 4000 ± 1000 ppm K-1. PCA estimated from the average across all SiPMs is a better estimator than the PCA calculated from individual SiPMs, for all of the other parameters, the opposite is true. All the estimated parameters were measured to the precision required for SBC-LAr10, and the Quads will be used in conditions to optimize the signal-to-noise ratio.

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“…of the signal at the SPAD level [33]. Therefore, future applications could be limited by CA which can be characterized by the methodology described in this paper.…”

Section: Jinst 19 T08003mentioning

confidence: 99%

Batch VUV4 characterization for the SBC-LAr10 scintillating bubble chamber

Hawley-Herrera,

Alfonso-Pita,

Behnke

et al. 2024

J. Inst.

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“…10,11 While best performance is typically achieved through dedicated, suitably tuned fabrication processes, since a few years CMOS technologies have been considered for the implementation of SPADs and silicon PMs. 12,13 This solution provides the utmost flexibility in the design of sensor arrays with monolithically integrated processing electronics, although at the cost of degraded performance of the sensitive element. In some applications, such as in fundamental research in particle physics or astrophysics, SPADs may be subjected to ionization or bulk damage, which may result in performance degradation.…”

Section: Introductionmentioning

confidence: 99%

Radiation effects and underlying damage mechanisms in CMOS SPADs

Ratti

Torilla

2023

Advanced Photon Counting Techniques XVII

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Effects of radiation on the dark count rate (DCR) of CMOS single photon avalanche diodes (SPADs) is reviewed. Both total ionizing and non ionizing dose effects are investigated using a test SPAD chip fabricated in a 180 nm CMOS technology as a case study. Models predicting the probability of damage, estimated through the measurement of DCR increase, are also presented. Emphasis is set on the damage dependence on radiation dose and device geometry. Particular attention is paid to the stochastic phenomena taking place in the sensitive volume of SPADs when they are exposed to relatively low fluences (micro-doses) of neutrons.

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