A 16 Mb RRAM test chip based on analog power system with tunable write pulses

Ma, Xiangchao; Wu, Huaqiang; Wu, Dong; Qian, He

doi:10.1109/nvmts.2015.7457478

Cited by 4 publications

(1 citation statement)

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“…In the conductive filament (CF)-type RRAM devices, the mechanism of the resistance switching is the formation and disruption of conductive filaments (nanometric in diameter) within the resistive switching layer (a few nanometers in thickness) under external electrical stimuli. RRAM devices have many attractive features, such as small device area (4 F 2 ), fast switching speed (<1 ns) [76], high scalability [77][78][79], 3D integration capability [80,81], and low energy consumption for resistance switching (<10 pJ/bit) [82,83]. Based on the type of the conductive filaments, the RRAM devices can be divided into two types, which are the valence change memory (VCM) [76] and the electrochemical metallization memory (ECM) [84][85][86], which is also known as conductive-bridge RAM (CBRAM).…”

Section: Resistive Random-access Memory Devicesmentioning

confidence: 99%

Harnessing Conductive Oxide Interfaces for Resistive Random-Access Memories

Kvatinsky

Kornblum

2021

Front. Phys.

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Two-dimensional electron gases (2DEGs) can be formed at some oxide interfaces, providing a fertile ground for creating extraordinary physical properties. These properties can be exploited in various novel electronic devices such as transistors, gas sensors, and spintronic devices. Recently several works have demonstrated the application of 2DEGs for resistive random-access memories (RRAMs). We briefly review the basics of oxide 2DEGs, emphasizing scalability and maturity and describing a recent trend of progression from epitaxial oxide interfaces (such as LaAlO3/SrTiO3) to simple and highly scalable amorphous-polycrystalline systems (e.g., Al2O3/TiO2). We critically describe and compare recent RRAM devices based on these systems and highlight the possible advantages and potential of 2DEGs systems for RRAM applications. We consider the immediate challenges to revolve around scaling from one device to large arrays, where further progress with series resistance reduction and fabrication techniques needs to be made. We conclude by laying out some of the opportunities presented by 2DEGs based RRAM, including increased tunability and design flexibility, which could, in turn, provide advantages for multi-level capabilities.

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