A 194 GHz fundamental frequency oscillator with 1.85 mW differential output power in 65nm CMOS

Nguyen, Thanh Dat; Hong, Jong-Phil

doi:10.1109/mwsym.2017.8058973

Cited by 1 publication

(2 citation statements)

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“…Using these techniques, a 194 GHz fundamental oscillator with the output power of 2.67 dBm was designed and implemented. This work is the extension of our work from [36]. To compare with [36], the two techniques applied to the proposed oscillator were systematically analyzed.…”

Section: Introductionmentioning

confidence: 99%

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High Power and High Frequency CMOS Oscillator With Source-to-Drain Coupling and Capacitive Load Reduction Circuit

Nguyen

Hong

2020

IEEE Access

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The proposed oscillator can increase the output power by coupling the signal at the source of the core transistor to the drain of the buffer transistor. In addition, the source-to-drain coupling generates an optimum negative transconductance at the desired operating frequency. A capacitive load reduction circuit is also applied to increase the fundamental oscillation frequency. Using these techniques, the fundamental and pushpush oscillators were implemented using 65 nm CMOS technology. The measurement results of the fundamental and push-push oscillators showed 2.7 and −25 dBm of peak differential output power at 194 and 394 GHz, respectively. In the 200 GHz frequency band, the proposed fundamental oscillator shows the highest output power among recently reported state-of-the-art CMOS oscillators.

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Section: Introductionmentioning

confidence: 99%

“…This work is the extension of our work from [36]. To compare with [36], the two techniques applied to the proposed oscillator were systematically analyzed. In addition, to verify the analysis of the source-to-drain coupling, a 236 GHz fundamental oscillator with output power of −9 dBm was also designed.…”

Section: Introductionmentioning

confidence: 99%