A 2.4 GHz 20 W 8-Channel RF Source Module with Improved Channel Output Balance

Abstract

This paper presents a 2.4 GHz 20 W 8-channel radio frequency (RF) source module with improved channel output balance. The proposed RF source module is composed of an RF source generation/DC control part, a power amplification part, and a power dividing part. A 2-stage power amplifier (PA) is combined with gallium nitride high-electron-mobility transistors, including a 25 W transistor and 2-way combined 120 W transistors as the drive and main PA, respectively. In addition, a structure was applied to improve the channel output balance compared to that of the previous module, and the differences of the phase and magnitude of the output power between channels are alleviated within 0.35° and 0.18 dB, respectively. A water jacket was implemented under the drive and main PAs for liquid cooling; however, unlike in the previous work, it was designed by optimizing the size of the water jacket and reducing unnecessary materials using a brazing process. The output power at each channel was 43 dBm, and the drain efficiency was more than 50% at 2.4 GHz. The total module size was 244 mm × 247.4 mm × 30 mm, and its volume was reduced by approximately 58.4% compared to that of the previous module.

A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

“…Gallium nitride (GaN) semiconductors have a high breakdown voltage due to inherent wide-bandgap and high current density, which is advantageous for use as power semiconductors [1,2]. In addition, since the high electron mobility transistor (HEMT) structure has high electron mobility due to the generation of its unique 2-D electron gas (2-DEG), GaN HEMTs have been widely studied and utilized in high-frequency power amplifiers [3][4][5][6][7]. Since GaN HEMTs exhibit high power density but have a self-heating effect, a source via structure that can dissipate heat well to substrates is widely used in transistor layouts.…”