A 2.4-GHz High Conversion Gain Passive Mixer Using $Q$ -Boosted $\pi $ -Type LCL Matching Networks in 90-nm CMOS

Oh, Hyunmyung; Kim, Jae-Sun; Lim, Jeong-Taek; Kim, Choul‐Young

doi:10.1109/lmwc.2017.2723985

Cited by 12 publications

(9 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Leveraging the well-established theory of inductive source degeneration, the CPW transistor’s source was connected to an inductor. To make the pre-appraisal of the GaN HEMT noise characteristic more accurate, a simplified representation of the GaN HEMT’s noise equivalent circuit model [ 16 , 17 , 18 , 19 ] is presented in Figure 2 , incorporating a source series inductor [ 1 , 12 , 33 ]. This model only considers the shot noise and channel diffusion noise since the channel diffusion noise accounts for a large proportion of device noise.…”

Section: Analysis and Design Of Mmic Lnamentioning

confidence: 99%

“…The π-type two-port network of the GaN HEMT [ 1 , 12 ] can be simplistically presented as Y-parameter matrix:

…”

Section: Analysis and Design Of Mmic Lnamentioning

confidence: 99%

“…In Figure 1 , four hybrid-MNs are employed to fulfill the requirement of appropriate matching for broadband and low NF [ 1 , 4 , 26 ]. In order to minimize the introduction of noise, the design strategy for the input matching network (IMN) proposes the use of few lumped components [ 35 ].…”

Section: Analysis and Design Of Mmic Lnamentioning

confidence: 99%

“…To prevent interference between different industries that use spectrum resources, the International Telecommunication Union has established international radio regulations. Currently, low-frequency (600 MHz–3 GHz) resources are mainly allocated from the first-generation mobile communications system (1G) to the fourth-generation mobile communications system (4G) [ 1 , 2 ]. The most significant change in the communication generation from 2G to 5G is the increase in data transmission speeds.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

Huang

Zhang

Wang

et al. 2023

Sensors

View full text Add to dashboard Cite

This paper presents a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) that is compatible with n257 (26.5–29.5 GHz) and n258 (24.25–27.5 GHz) frequency bands for fifth-generation mobile communications system (5G) and millimeter-wave radar. The total circuit size of the LNA is 2.5 × 1.5 mm2. To guarantee a trade-off between noise figure (NF) and small signal gain, the transmission lines are connected to the source of gallium nitride (GaN)-on-SiC high electron mobility transistors (HEMT) by analyzing the nonlinear small signal equivalent circuit. A series of stability enhancement measures including source degeneration, an RC series network, and RF choke are put forward to enhance the stability of designed LNA. The designed GaN-based MMIC LNA adopts hybrid-matching networks (MNs) with co-design strategy to realize low NF and broadband characteristics across 5G n257 and n258 frequency band. Due to the different priorities of these hybrid-MNs, distinguished design strategies are employed to benefit small signal gain, input-output return loss, and NF performance. In order to meet the testing conditions of MMIC, an impeccable system for measuring small has been built to ensure the accuracy of the measured results. According to the measured results for small signal, the three-stage MMIC LNA has a linear gain of 18.2–20.3 dB and an NF of 2.5–3.1 dB with an input–output return loss better than 10 dB in the whole n257 and n258 frequency bands.

show abstract

Section: Analysis and Design Of Mmic Lnamentioning

confidence: 99%

“…The π-type two-port network of the GaN HEMT [ 1 , 12 ] can be simplistically presented as Y-parameter matrix:

…”

Section: Analysis and Design Of Mmic Lnamentioning

confidence: 99%

Section: Analysis and Design Of Mmic Lnamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

Huang

Zhang

Wang

et al. 2023

Sensors

View full text Add to dashboard Cite

show abstract

“…In Fig. 1, a π-matching network [21,22] composed of two capacitors (C2 and C3) and an inductor (TL5) is employed to achieve inter-stage matching. As shown in Fig.…”

Section: Matching Designmentioning

confidence: 99%

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

Yang

Zhang

Liu

et al. 2022

IEICE Electron. Express

View full text Add to dashboard Cite

A K-band low noise amplifier (LNA) with low and flat noise figure (NF) is proposed in this letter. The LNA is designed as the first stage of an RF receiver in a frequency modulated continuous wave (FMCW) multiple-in multiple-out (MIMO) radar system for marine vessel monitoring and airspace unmanned aerial vehicle (UAV) monitoring. The multi-antenna structure at the receiving end of the MIMO radar implies higher sensitivity. The LNA is fabricated using a 100-nm GaN high electron mobility transistor (HEMT) process with a chip area of 2.2 mm 2 . By analyzing the noise equivalent circuit model of a GaN-on-Si HEMT and optimizing the matching network, the proposed LNA achieves a measured average gain of 17.2 dB, an NF of 2.0-2.3 dB over the frequency range from 18 to 22.5 GHz. With a power sweep measurement, this LNA achieves an P1dB of 10.5 dBm and an OIP3 of 19 dBm at 20 GHz. The DC consumption is 220 mW under 5 V power supply.

show abstract

Recent advancement in the design of mixers for software‐defined radios

Mehta

Donelli

2021

Int J RF Mic Comp-Aid Eng

View full text Add to dashboard Cite

The implementation of software-defined radio necessitates a versatile radio frequency (RF) front-end that can support multiple standards in different frequency bands. This article presents the state-of-the-art multiband and wideband mixers in the context of different receiver architectures suitable for softwaredefined radio (SDR). Wideband and multiband mixer designs reported in the literature are categorized on the basis of their circuit architecture. This study tabulates the results of mixer designs with an emphasis on noise figure (NF), conversion gain (CG), linearity, and image rejection ratio. The best parameters reported in the comparison are 68-84 dB of CG, 3.2 dB of NF, 2.5 mW of power consumption, 12.5 dBm of third-order input intercept point, and 0.015 mm 2 of area at different frequencies. The study also discusses the design challenges and techniques to overcome those issues. The article concludes with the summary and prospective developments for SDR architectures.

show abstract

A 2.4-GHz High Conversion Gain Passive Mixer Using $Q$ -Boosted $\pi $ -Type LCL Matching Networks in 90-nm CMOS

Cited by 12 publications

References 3 publications

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

Recent advancement in the design of mixers for software‐defined radios

Contact Info

Product

Resources

About