A 2.4-GHz Resistive Feedback LNA in 0.13-$\mu$m CMOS

Joo, Sanghoon; Choi, Tae‐Young; Jung, Byunghoo

doi:10.1109/jssc.2009.2031912

Cited by 69 publications

(43 citation statements)

References 41 publications

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“…The common-gate amplifier topology suffers from poor power gain and noise figure [15]. Recent study also shows implementation of LNA by different amplifier topology such as cascade, inductiveseries Peaking Technique [16], CG current reuse with noise cancelling, Fully differential CG, current reuse and cascade and so on [15] [16] [17].…”

Section: Overview Of Uwb Lna Topologymentioning

confidence: 99%

A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application

Kunal¹,

Abdul²

2015

CAE

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This paper proposes 2GHz ~ 8GHz UWB LNA with totem pole technique for low noise figure. The LNA was designed using 0.15 µm GaAs pHMET process. The designed LNA was simulated in ADS tool. The LNA exhibits a S(2,1) of 33.4~29.7 dB, minimum noise figure is 1.383~1.391 dB, reverse isolation was better than 40 dB in entire band. The LNA draws 32 mA. Resistive feedback technique was used for wideband matching and low noise figure. General TermsRFIC,

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Section: Overview Of Uwb Lna Topologymentioning

confidence: 99%

A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application

Kunal¹,

Abdul²

2015

CAE

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“…According to [7], there are two frequencies at which a perfect match can be obtained, which are w 1 ¼ 0, and w 2 ¼ 1= ffiffiffiffiffiffiffiffiffiffiffiffiffi L G C gs p respectively. If w 1 and w 2 are not too far apart, a good input matching is achieved from w 1 to w 2 .…”

Section: Conventional Lna Topologiesmentioning

confidence: 99%

“…When the frequency increases, according to [7], the voltage gain of the resistive feedback LNA will be…”

Section: Gainmentioning

confidence: 99%

A low noise figure 2-GHz bandwidth LNA using resistive feedback with additional input inductors

Zhang

Dinh

Chen

et al. 2013

IEICE Electron. Express

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In this paper, an input inductive network for the wideband LNA is proposed. The two input inductors located in and out of the feedback loop are set respectively to combine with the conventional resistive feedback structure. Input matching and NF of the LNA can be optimized separately by varying the value of the two input inductors without significant influence from one to the other. The proposed cascode LNA was analyzed, designed, and fabricated in the IBM 0.13 μm CMOS technology to verify the concept. A À10 dB S11 is achieved in a wide range of frequency from 1 GHz to 3 GHz. Within this bandwidth, the LNA has a gain of 7.5 dB and a minimum noise figure of 2.5 dB while consumes a 7 mW of power. The results indicate that the proposed input-network effectively alleviates the tradeoff between noise figure and bandwidth without requiring extra power consumption.

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“…However increasing the aspect ratio of transistor is caused the input and output capacitance become large; therefore, wideband operation is restricted [2]. In this design, the input stage consists of series RLC that causes effective transconductance increases [6]. Fig.…”

Section: Employing Noise Cancellation Techniquementioning

confidence: 99%

UWB resistive feedback LNA employing noise and distortion cancellation

Yargholi

Tarighat

2012

IEICE Electron. Express

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A CMOS Low Noise Amplifier (LNA) is designed for RF application by using TSMC RF CMOS 0.18 μm technology. Noise cancellation technique is applied to cascode transistor of the LNA core; because source parasitic capacitors of this transistor cause the noise figure increases in high frequency. The linearity of LNA is modified by the second order interaction between the PMOS and NMOS transistors in cascode structure. With this topology lower noise figure, improved linearity and lower power dissipation can be attained. This LNA achieved maximum power gain of 15.3 dB at 3 GHz band, noise figure of lower than 2.5 dB over the whole band of 3-5 GHz and IIP 3 of +10 dBm at 3 GHz while drawing 7.42 mA from 1.8 V supply voltage.

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A 2.4-GHz Resistive Feedback LNA in 0.13-$\mu$m CMOS

Cited by 69 publications

References 41 publications

A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application

A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application

A low noise figure 2-GHz bandwidth LNA using resistive feedback with additional input inductors

UWB resistive feedback LNA employing noise and distortion cancellation

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