A 2.5 V 256-level non-volatile analog storage device using EEPROM technology

Abstract

This integrated circuit stores 256 analog voltage levels in high density, non-volatile memory with -7.5mV resolution per level. By contrast, the multilevel storage capacity of a typical digital non-volatile memory is 4-levels per cell [ll. The integrated circuit operates over a voltage range of 2.5V to 5.5V. Previous analog storage implementation use a 5.0V supply for -12mV equivalent resolution per level in a 128k EEPROM C21.

High Fill-Factor Imagers for Neuromorphic Processing Enabled by Floating-Gate Circuits

“…We use floating-gate circuit elements to store and to generate the arbitrary basis functions needed for the matrixvector multiplication on the imager. This approach computes a similar function to ISD's audio recording ICs [41], but uses floating-gate circuits in a standard process rather than analog EEPROM cells in a special process. Figure 4 shows the top-level view of our basis generation circuitry.…”

Programmable Floating-Gate Techniques for CMOS Inverters

“…Initially used as EEPROM memory, analog floating-gates are used as a nonvolatile storage medium which can be used to bias analog circuits [3] [4] [5]. UV-programmable floating gate circuits have been used to set thresholds for an analog inverter in a standard process; however, the use of hot electron injection and tunneling for programming has significant potential [6].…”