A 2-5GHz 100W CW MMIC Limiter Using a Novel Input Topology

Bouchez, Joseph; Nguyen, Tuong; Zomorrodian, Valiallah; Reese, Eli; Sturzebecher, D.

doi:10.1109/csics.2013.6659191

Cited by 14 publications

(6 citation statements)

References 2 publications

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“…For instance, the design of multilayer CPW amplifier in [4] has shown 50% reduction in size compared to conventional planar design. Besides that, MMIC limiter based on pHEMT Schottky diodes has the smallest chip size and better insertion loss than previously reported p-i-n diodes [5]. The degradation of device performance of multilayer components is due to thin-film conventional CPW transmission lines used in connecting active and passive components in a vertical arrangement.…”

Section: Introductionmentioning

confidence: 98%

“…Figure 1 illustrates the implementation of multilayer MMICs on semi-insulating GaAs substrate with pseudomorphic high electron mobility transistors (pHEMTs) being pre-fabricated on the top of it. The integration of active and passive components can be realized by opening the silicon nitride (Si 3 N 4 ) windows of the pre-fabricated (virgin) pHEMTs so that sandwiched layers of metal and dielectric can be deposited to create multilayer MMICs [5]. One example of the devices designed and fabricated using verticaloriented MMICs technology is a pHEMT based on AlGaAs/ InGaAs heterojunction.…”

Section: Introductionmentioning

confidence: 99%

“…One example of the devices designed and fabricated using verticaloriented MMICs technology is a pHEMT based on AlGaAs/ InGaAs heterojunction. Various works on vertical-oriented pHEMTs are reported in the open literatures which unveiled the reduction in chip size, improved receiver performance and an extended frequency of operation [1][2][3][4][5][6]. Much interest is now on the characterization of active devices in this multilayer CPW MMIC environment.…”

Section: Introductionmentioning

confidence: 99%

“…Much interest is now on the characterization of active devices in this multilayer CPW MMIC environment. The state-of-the art MMIC designs and their performance analysis has become an important issue in recent years [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

Alim

Ali

Haris

et al. 2017

Semicond. Sci. Technol.

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This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s , filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

Alim

Ali

Haris

et al. 2017

Semicond. Sci. Technol.

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“…Power limiters are also implemented in a diverse array of technologies including semiconductor diode [6], [7], FET [8]- [10], ferromagnetic [11]- [13], MEMS [14], [15], and plasma [16]- [20]. Power limiting is important for the protection of sensitive RF and microwave systems.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement

2020

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A novel hybrid approach integrating a MEMS switch with a gas discharge tube plasma cell to enhance switch survivability and isolation, especially at high incident power levels, is demonstrated. The theory of operation is discussed including consideration of the underlying plasma phenomena as well as the practical integration details. Measurement of a fabricated prototype is presented. Discussion of measurement challenges and potential solutions is accompanied by detailed explanations of measurement practice. Measurements provide insights into applied RF plasmas not present in the body of literature. Wideband enhancement of isolation by more than 10 dB at 50 W incident power is observed in a quasi-absorptive mode with increasing isolation over power. No penalty to the excellent linearity of MEMS switches is detected with a measured IIP3 of 75.3 dBm. Advantages in linearity as compared to semiconductor-based power limiting solutions are shown and demonstrate state-of-the-art performance. An incremental insertion loss of less than 0.2 dB with a return loss better than 12.5 dB is reported. Measurement of the effects on MEMS switch timing parameters as well as time domain characterization of the plasma breakdown is included.

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A C‐band 370 W MMIC high‐power PIN limiter with heterogeneous integration

Dai

Jing³

et al. 2022

Micro & Optical Tech Letters

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This paper designs a mesa‐structured monolithic microwave integrated circuit (MMIC) limiter working in C‐band. The quasi‐vertical Si‐based PIN diodes are heterogeneously integrated on the SiC substrate with high thermal conductivity, such that the parasitic parameters are greatly reduced and the power capacity is enhanced. According to the measured results, a maximum insertion loss of 1.1 dB and a minimum return loss of 17.69 dB for both input and output terminals are realized to cover the 5–6 GHz frequency range. The flat leakage of 23 dBm is achieved for a 150 W continuous wave and 370 W pulse input signal level. We believe the proposed MMIC limiter provides an effective tool that can be used in the transmit‐receive modules working in C‐band.

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A 2-5GHz 100W CW MMIC Limiter Using a Novel Input Topology

Cited by 14 publications

References 2 publications

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement

A C‐band 370 W MMIC high‐power PIN limiter with heterogeneous integration

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