A 241-GHz-Bandwidth Distributed Amplifier with 10-dBm P1dB in 0.25-μm InP DHBT Technology

Jyo, Teruo; Nagatani, Munehiko; Ida, M.; Misawa, Miwa; Wakita, Hitoshi; Terao, Naoki; Nosaka, Hideyuki

doi:10.1109/mwsym.2019.8700975

Cited by 20 publications

(11 citation statements)

References 16 publications

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“…Also, it is very common to substitute the transistors with Cascode cells in order to decrease the input capacitance of each amplifying unit, thus increasing gain and bandwidth of the distributed amplifier. Examples of distributed amplifiers can be found both in III-V [9], [74]- [78] and Silicon-based PAs [79]- [82].…”

Section: L1 L2 L3mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: L1 L2 L3mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…For DAs with high absolute BWs [2]- [14], two key enablers are high cutoff frequencies, especially a high maximumoscillation frequency ( f max ) and a thin-film microstrip transmission line (TFMSL) environment. The first of which can be seen from gain approximations as given, e.g., in [15] and [16] where the transconductance and the input capacitance (as part of the input-line impedance) of an active device dominate the performance of common implementations.…”

Section: Introductionmentioning

confidence: 99%

“…It is the aim of this work to investigate limiting effects that might be part of common implementations of DAs with the goal to extend the absolute frequency BW into the range of beyond 300 GHz. State-of-the-art results are mostly based on heterojunction bipolar transistor (HBT) technologies and achieve BWs of up to 235 and 241 GHz [2], [3]. Table I shows an overview of previously published DA monolithic microwave integrated circuits (MMICs) with a BW of more than 150 GHz.…”

Section: Introductionmentioning

confidence: 99%

First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

Thome

Leuther

2021

IEEE J. Solid-State Circuits

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This article reports on the first demonstration of distributed amplifier monolithic microwave integrated circuits (MMICs) with a bandwidth (BW) of more than 300 GHz. The three presented circuits utilize a uniform traveling-wave amplifier topology with six, eight, and ten unit cells, respectively. In this article, the impact of the connection between the gate line and the transistors on the achievable performance is investigated. It is demonstrated that a short connection clearly provides a more favorable combination of BW, input matching, and losses on the gate line. Thus, it is possible to extend the BW beyond 300 GHz while utilizing transistors with a gate width of 2 × 10 µm. The MMICs are fabricated in a 35-nm gate-length InGaAs metamorphic high-electron-mobility transistor technology. The MMIC with six unit cells exhibits a noise figure (NF) between 3.5 and 8.2 dB for a noise-optimized bias from 1 GHz up to the measurement limit of 308 GHz. The MMIC with ten unit cells achieves a minimum NF of 2 dB for frequencies of around 50 GHz and stays below 10 dB for the entire band. Furthermore, for a power-optimized bias, the same circuit generates an output power between 8.7 and 14.8 dBm for a frequency range from 1 to 250 GHz.

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“…The 400 GbE requires over 25 Gbaud link speeds per lane [1]. To expand the bandwidth of optical transceivers, distributed amplifiers are essential components [2][3]. Also, most circuits used in optical transceivers, such as laser/modulator drivers [4][5], transimpedance amplifiers [6], or analog multiplexers [7][8], are usually differential topology.…”

Section: Introductionmentioning

confidence: 99%

Design of an Area-Efficient Differential Distributed Amplifier Based on the Theory of Differential Transmission Lines

Kawahara

Umeda

Takano

2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper presents an area-efficient differential distributed amplifier using differential coupled inductors. The artificial transmission lines of the proposed distributed amplifier are modeled as differential transmission lines, and thus, it can be easily designed compared with other area reduction techniques. The dimensions of the coupled inductors have been optimized using a gradient descent algorithm with a scalable model of the coupled inductors. The proposed amplifier was designed using 1P5M 180 nm standard CMOS technology. Post-layout simulation results demonstrated a gain of 6.9 dB and a bandwidth of 20.2 GHz with 4.9 ps Nyquist group delay variation. A core area of the proposed amplifier was 0.28 , which was the smallest value compared with previous works using similar processes.

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A 241-GHz-Bandwidth Distributed Amplifier with 10-dBm P1dB in 0.25-μm InP DHBT Technology

Cited by 20 publications

References 16 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

Design of an Area-Efficient Differential Distributed Amplifier Based on the Theory of Differential Transmission Lines

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