A 256kb 9T Near-Threshold SRAM With 1k Cells per Bit-Line and Enhanced Write and Read Operations

Pasandi, Ghasem; Fakhraei, S M

doi:10.48550/arxiv.1812.10011

2018

DOI: 10.48550/arxiv.1812.10011

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A 256kb 9T Near-Threshold SRAM With 1k Cells per Bit-Line and Enhanced Write and Read Operations

Ghasem Pasandi¹,

S M Fakhraei²

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A 256kb 9T Near-Threshold SRAM With 1k Cells per Bit-Line and Enhanced Write and Read Operations

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