2021
DOI: 10.1109/lssc.2021.3054885
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A 28–34-GHz Stacked-FET Power Amplifier in 28-nm FD-SOI With Adaptive Back-Gate Control for Improving Linearity

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Cited by 10 publications
(1 citation statement)
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“…P LANAR transformers (TFs) based on multilevel backend thick metallization technologies have been commonly used as impedance matching circuits (MCs) in contemporary millimeter-wave (mm-wave) CMOS circuits for a compact layout and broadband operation [1], [2], [3], [4], [5], [6], [7], [8]. However, the common equivalent models of The authors are with the Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea (e-mail: daniellee97@postech.ac.kr; taehyun@postech.ac.kr; hojin.song@ postech.ac.kr).…”
Section: Introductionmentioning
confidence: 99%
“…P LANAR transformers (TFs) based on multilevel backend thick metallization technologies have been commonly used as impedance matching circuits (MCs) in contemporary millimeter-wave (mm-wave) CMOS circuits for a compact layout and broadband operation [1], [2], [3], [4], [5], [6], [7], [8]. However, the common equivalent models of The authors are with the Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea (e-mail: daniellee97@postech.ac.kr; taehyun@postech.ac.kr; hojin.song@ postech.ac.kr).…”
Section: Introductionmentioning
confidence: 99%