A 2800-μm2 thermal-diffusivity temperature sensor with VCO-based readout in 160-nm CMOS

Angevare, Jan A.; Pedala, Lorenzo; Sonmez, Ugur; Foti, Sebastiano; Makinwa, Kofi A. A.

doi:10.1109/asscc.2015.7387444

Cited by 6 publications

(10 citation statements)

References 11 publications

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“…The electrical signal was then converted into digital form so that it can be shown in the other devices. Temperature sensors are easily produced with semiconductor processing technology by using the temperature characteristics of the PN junction [2][3]. The basic block diagram of CMOS based thermal detector is shown in Figure 1.…”

Section: Circuit Block Diagrammentioning

confidence: 99%

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CMOS based thermal detector for processor

Yang

Jubadi

2020

IJEECS

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<p>This project proposed a design of low power CMOS-based thermal detector which can detect the temperature of processor such as in Central Processing Unit. By re-designing temperature detector circuit using CMOS technology, the reduction in power consumption and area size of the thermal detector can be obtained. In this paper, the design of thermal detector consists of temperature sensing core, amplifier, and Analog to Digital Converter (ADC), respectively. The sensor was designed using 0.13 µm CMOS technology and operates by sensing the temperature of processor and produced a digital output value. The temperature detection range was setup between 0 °C to 80 °C with 10 °C resolution. The temperature detector was capable to show temperature readings in binary value. It consumed an average power of 558.2 µW and a space occupancy of 0.0118 mm².</p>

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Section: Circuit Block Diagrammentioning

confidence: 99%

“…Temperature sensor is commonly used for various kind of application such as in measurement, instrumentation, and control system [1][2][3][4]. Most of processors nowadays are easily overheated due to high usage of softwares and applications.…”

Section: Introductionmentioning

confidence: 99%

CMOS based thermal detector for processor

Yang

Jubadi

2020

IJEECS

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“…To achieve this, the counter is split up into two parts: a fine two-bit counter and a coarse five-bit counter (Fig. 6) [13]. This reduces its power consumption, since clock gating can be used to ensure that the coarse counter only operates at one quarter the frequency of the fine counter.…”

Section: B Up/down Countermentioning

confidence: 99%

“…To accommodate this, all the sensors were driven at F WB ≈ 2.9MHz (= 75MHz / 2•13). An FFT of [10,13] or frequency-to-digital converters [14]). 2 Simulated, measured <0.5LSB~0.33°C/V.…”

Section: Measurementsmentioning

confidence: 99%

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A 6800-$\mu$ m² Resistor-Based Temperature Sensor With ±0.35 °C (3$\sigma$ ) Inaccuracy in 180-nm CMOS

Angevare

Makinwa

2019

IEEE J. Solid-State Circuits

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This paper describes a compact resistor-based temperature sensor that has been realized in a 180nm CMOS process. It occupies only 6800µm², thanks to the use of a highlydigital VCO-based phase domain sigma-delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35°C (3σ) inaccuracy from-35°C to 125°C. Furthermore, it achieves 0.12°C (1σ) resolution at 2.8 kSa/s, which is mainly limited by the time-domain quantization imposed by the counter.

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Compact Thermal-Diffusivity-Based Temperature Sensors in 40-nm CMOS for SoC Thermal Monitoring

Sonmez

Foti

Makinwa

2017

IEEE J. Solid-State Circuits

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An array of temperature sensors based on the thermal diffusivity (TD) of bulk silicon has been realized in a standard 40-nm CMOS process. In each TD sensor, a highly-digital VCO-based ΣΔ ADC digitizes the temperature-dependent phase-shift of an electro-thermal filter (ETF). A phase calibration scheme is used to cancel the ADC's phase offset. Two types of ETF were realized, one optimized for accuracy and one optimized for resolution. Sensors based on the accuracy-optimized ETF achieved a resolution of 0.36 °C (rms) at 1 kSa/s, and inaccuracies of ±1.4 °C (3σ, uncalibrated) and ±0.75 °C (3σ, room-temperature calibrated) from-40 to 125 °C. Sensors based on the resolution-optimized ETFs achieved an improved resolution of 0.21 °C (rms), and inaccuracies of ±2.3 °C (3σ, uncalibrated) and ±1.05 °C (3σ, room-temperature calibrated). The sensors draw 2.8 mA from supply voltages as low as 0.9 V, and occupy only 1650 μm 2 , making them some of the smallest smart temperature sensors reported to date, and well suited for thermal monitoring applications in systems-on-chip (SoC).

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A 2800-μm2 thermal-diffusivity temperature sensor with VCO-based readout in 160-nm CMOS

Cited by 6 publications

References 11 publications

CMOS based thermal detector for processor

CMOS based thermal detector for processor

A 6800-$\mu$ m² Resistor-Based Temperature Sensor With ±0.35 °C (3$\sigma$ ) Inaccuracy in 180-nm CMOS

Compact Thermal-Diffusivity-Based Temperature Sensors in 40-nm CMOS for SoC Thermal Monitoring

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A 2800-μm2 thermal-diffusivity temperature sensor with VCO-based readout in 160-nm CMOS

Cited by 6 publications

References 11 publications

CMOS based thermal detector for processor

CMOS based thermal detector for processor

A 6800-$\mu$ m2 Resistor-Based Temperature Sensor With ±0.35 °C (3$\sigma$ ) Inaccuracy in 180-nm CMOS

Compact Thermal-Diffusivity-Based Temperature Sensors in 40-nm CMOS for SoC Thermal Monitoring

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A 6800-$\mu$ m² Resistor-Based Temperature Sensor With ±0.35 °C (3$\sigma$ ) Inaccuracy in 180-nm CMOS