A 280nW leakage-ratio-based CMOS temperature sensor with supply/clock sensitivity suppression

Lu, Hangyi

doi:10.1587/elex.19.20220223

Cited by 3 publications

(3 citation statements)

References 32 publications

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“…However, they are susceptible to process variation which often require an expensive two-point calibration scheme to achieve the desired accuracy. Besides, their performance in supply sensitivity tend to be poor [18][19][20][21][22][23][24][25][26][27][28][29][30][31]. This letter presents a compact, low-power temperature sensor front-end based solely on MOSFETs, which is wellsuited for SoC designs.…”

Section: Introductionmentioning

confidence: 99%

A 840-µm2 low-power all-MOS temperature sensor front-end with real-time voltage calibration

Li,

Yang,

Kong

et al. 2024

IEICE Electron. Express

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This letter presents an 840𝜇m 2 557nW temperature sensor front-end designed for system on chip (SoC) thermal monitoring. The circuit is implemented using MOS transistors exclusively, which enhances its scalability with process technologies and compatibility with digital circuit processes. To address MOSFETs circuit's process variation issues, a differential voltage readout scheme is employed. Dynamic element matching (DEM) is used to minimize mismatch of the circuit. The sensor is self-referenced, eliminating the need for an external reference voltage. Realtime voltage calibration (RVC) scheme is used to improve the performance of supply sensitivity. It is fabricated using a 55nm process, and the measurement results showed an error of -0.69/0.85℃ across 16 samples over a temperature range of 0℃ to 100℃ with a low-cost one-point calibration at 30℃, while the maximum supply sensitivity is 3.3℃/V.

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Section: Introductionmentioning

confidence: 99%

A 840-µm2 low-power all-MOS temperature sensor front-end with real-time voltage calibration

Li,

Yang,

Kong

et al. 2024

IEICE Electron. Express

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show abstract

“…[1][2][3][4] Bipolar junction transistor-based methods utilize the temperature dependencies seen in the base-emitter voltage of a BJT. [5][6][7][8][9][10][11][12] Sensors that utilize this property are known to have very high sensing accuracy over a wide temperature range. However, due to their use of BJTs, such sensors require a relatively higher supply voltage and a higher current to operate.…”

Section: Introductionmentioning

confidence: 99%

Wide-range and low supply dependency MOSFET-based temperature sensor utilizing statistical properties of scaled MOSFETs

Ota

Islam

Hisakado

et al. 2023

Jpn. J. Appl. Phys.

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We present a MOSFET-based temperature sensing method capable of high-accuracy temperature estimation across a wide temperature range while having a low supply voltage dependency. Existing MOSFET-based sensors, while capable of low-power operation, suffer from low sensing accuracy and a narrow sensing range. The proposed method utilizes per-MOSFET parameter variations seen in scaled CMOS processes. By measuring a statistical parameter of sub-threshold drain currents, we can extract a complimentary temperature value. To prove the feasibility of our method, we measured six chips fabricated with a commercial 65nm process. The proposed method achieves a sensing accuracy of −0.54/+0.43 ℃ within a temperature range of −20 to 120 ℃ at a supply voltage of 1.2 V. In addition, the proposed method has a worst-case supply dependency of 3.7 ℃/V at 20 ℃.

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“…Because SAWs use a specific piezoelectric crystal, the signal is susceptible to noise interference and the operating temperature is greatly limited [9][10][11]. References [12][13][14][15][16] integrate the sensing function into the chip, which gives it the characteristics of high precision and low power consumption. In view of the high cost of electronic chips, their wide use is restricted.…”

Section: Introductionmentioning

confidence: 99%

Wireless High Temperature Sensing Chipless Tag Based on a Diamond Ring Resonator

Wang¹,

Gu³

et al. 2023

Micromachines

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A passive wireless sensor is designed for real-time monitoring of a high temperature environment. The sensor is composed of a double diamond split rings resonant structure and an alumina ceramic substrate with a size of 23 × 23 × 0.5 mm3. The alumina ceramic substrate is selected as the temperature sensing material. The principle is that the permittivity of the alumina ceramic changes with the temperature and the resonant frequency of the sensor shifts accordingly. Its permittivity bridges the relation between the temperature and resonant frequency. Therefore, real time temperatures can be measured by monitoring the resonant frequency. The simulation results show that the designed sensor can monitor temperatures in the range 200~1000 °C corresponding to a resonant frequency of 6.79~6.49 GHz with shifting 300 MHz and a sensitivity of 0.375 MHz/°C, and demonstrate the quasi-linear relation between resonant frequency and temperature. The sensor has the advantages of wide temperature range, good sensitivity, low cost and small size, which gives it superiority in high temperature applications.

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A 280nW leakage-ratio-based CMOS temperature sensor with supply/clock sensitivity suppression

Cited by 3 publications

References 32 publications

A 840-<i>µm</i><sup>2</sup> low-power all-MOS temperature sensor front-end with real-time voltage calibration

A 840-<i>µm</i><sup>2</sup> low-power all-MOS temperature sensor front-end with real-time voltage calibration

Wide-range and low supply dependency MOSFET-based temperature sensor utilizing statistical properties of scaled MOSFETs

Wireless High Temperature Sensing Chipless Tag Based on a Diamond Ring Resonator

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