A 3-D-Silicon Nanowire FET Biosensor Based on a Novel Hybrid Process

Gong, Xiaofeng; Zhao, Rui; Yu, Xiaomei

doi:10.1109/jmems.2017.2788900

“…Biosensors are of applicable for medical and health care applications as well as for forensic industries, national security and monitoring of environment 1–5 . Among all types of biosensors FET‐based biosensor gains lot of attention among researchers due to their highly desirable properties such as low power consumption, rapid detection of biomolecule without labelling, low‐cost mass production, portability and easier for on chip integration 1–3 .…”

Section: Introductionmentioning

confidence: 99%

“…One of the biggest challenges faced among the researchers in conventional FET (CFET) based biosensors is their lower sensitivity 4 . In order to enhance the sensitivity of biosensors different structural modification of CFET has been done and reported in literature 5,6 . Out of all these nanowire biosensors have shown great potential to become a practical detection platform in biological and medical applications.…”

Section: Introductionmentioning

confidence: 99%

Analytical modeling of dielectric modulated negative capacitance MoS₂ field effect transistor for next‐generation label‐free biosensor

Panda

¹

,

Lenka

²

,

Singh³

et al. 2022

Int J Numerical Modelling

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In this paper, a dielectric modulated negative capacitance (NC) MoS2 FET‐based biosensor is proposed for label‐free detection of biomolecules such as enzymes, proteins, DNA, and so forth. Various reports present on experimental demonstration and modeling of NC MoS2 FET but it is never utilized as a dielectric modulated biosensor. So, in this work, the modeling, characterization and sensitivity analysis of dielectric modulated NC MoS2 FET is focused. For immobilization of biomolecules, a nanocavity is formed below the gate by etching some portion of the gate oxide material. The immobilization of biomolecules in the cavity leads to a variation of different electrostatic properties such as surface potential, threshold voltage, drain current, and subthreshold swing which can be utilized as sensing parameters. An analytical model for the proposed biosensor is also developed in the subthreshold region by considering the properties of two‐dimensional ferroelectric materials and benchmarked with TCAD device simulations. The effect of change of gate length and doping concentration on different electrical properties is also analyzed to estimate the optimum value of channel doping. The results prove that the proposed device can be used for next‐generation low power label‐free biosensor which shows enhanced sensitivity as compared to traditional FET‐based biosensors.

show abstract

“…One of the biggest challenges faced among the researchers in conventional FET based biosensors is their lower sensitivity [4]. In order to enhance the sensitivity of biosensors, different structural modification of conventional FET has been done and reported in literature [5][6]. Out of all these nanowire biosensors have shown great potential to become a practical detection platform in biological and medical applications.…”

Section: Introductionmentioning

confidence: 99%

Analytical Modelling of Dielectric Modulated Negative Capacitance MoS2-FET for Biosensor Application

Panda¹,

Singh²,

Lenka³

et al. 2021

Preprint

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In this paper, a dielectric modulated negative capacitance (NC)-MoS2 field effect transistor (FET)-based biosensor is proposed for label-free detection of biomolecules such as enzymes, proteins, DNA, etc. Various reports present experimental demonstration and modelling of NC-MoS2 FET, but it is never utilized as a dielectric modulated biosensor. Therefore, in this work, the modelling, characterization and sensitivity analysis of dielectric modulated NC-MoS2 FET is focussed. For immobilization of biomolecules, a nanocavity is formed below the gate by etching some portion of the gate oxide material. The immobilization of biomolecules in the cavity leads to a variation of different electrostatic properties such as surface potential, threshold voltage, drain current, and subthreshold-swing (SS) which can be utilized as sensing parameters. An analytical model for the proposed biosensor is also developed in the subthreshold region by considering the properties of two-dimensional (2D) ferroelectric materials and benchmarked with TCAD device simulations. The effect of change of gate length and doping concentration on different electrical properties is also analysed to estimate the optimum value of channel doping. The results prove that the proposed device can be used for next-generation low power label-free biosensor which shows enhanced sensitivity as compared to traditional FET-based biosensors.

show abstract

“…Biosensors are applicable for medical and health care applications as well as for forensic industries, national security and monitoring of environment [1][2][3][4][5]. Among all types of biosensors, FET-based biosensor gains a lot of attention among researchers due to their highly desirable properties such as low power consumption, rapid detection of biomolecule without labelling, low-cost mass production, portability and easier for on chip integration [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…In order to cope with the demand of modern era of biosensors with the performance improvement, MOSFET scaling, response time and signal to noise ratio (SNR) are some of the important parameters to be considered [5,7]. The scale down of transistor and high density on-chip integration produces a lot of short channel effects (SCEs) which in turn dissipates a large amount of power in the device [5]. In order to design low power biosensor, the major challenges faced by the researchers are how to get rid of the SCEs.…”

Section: Introductionmentioning

confidence: 99%

Analytical Modelling of Dielectric Modulated Negative Capacitance MoS2-FET for Biosensor Application

Panda¹,

Singh²,

Lenka³

et al. 2021

Preprint

2

0

View full text Add to dashboard Cite

In this paper, a dielectric modulated negative capacitance (NC)-MoS2 field effect transistor (FET)-based biosensor is proposed for label-free detection of biomolecules such as enzymes, proteins, DNA, etc. Various reports present experimental demonstration and modelling of NC-MoS2 FET, but it is never utilized as a dielectric modulated biosensor. Therefore, in this work, the modelling, characterization and sensitivity analysis of dielectric modulated NC-MoS2 FET is focussed. For immobilization of biomolecules, a nanocavity is formed below the gate by etching some portion of the gate oxide material. The immobilization of biomolecules in the cavity leads to a variation of different electrostatic properties such as surface potential, threshold voltage, drain current, and subthreshold-swing (SS) which can be utilized as sensing parameters. An analytical model for the proposed biosensor is also developed in the subthreshold region by considering the properties of two-dimensional (2D) ferroelectric materials and benchmarked with TCAD device simulations. The effect of change of gate length and doping concentration on different electrical properties is also analysed to estimate the optimum value of channel doping. The results prove that the proposed device can be used for next-generation low power label-free biosensor which shows enhanced sensitivity as compared to traditional FET-based biosensors.

show abstract

A 3-D-Silicon Nanowire FET Biosensor Based on a Novel Hybrid Process

Cited by 17 publications

References 22 publications

Analytical modeling of dielectric modulated negative capacitance MoS₂ field effect transistor for next‐generation label‐free biosensor

Analytical modeling of dielectric modulated negative capacitance MoS₂ field effect transistor for next‐generation label‐free biosensor

Analytical Modelling of Dielectric Modulated Negative Capacitance MoS2-FET for Biosensor Application

Analytical Modelling of Dielectric Modulated Negative Capacitance MoS2-FET for Biosensor Application

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A 3-D-Silicon Nanowire FET Biosensor Based on a Novel Hybrid Process

Cited by 17 publications

References 22 publications

Analytical modeling of dielectric modulated negative capacitance MoS2 field effect transistor for next‐generation label‐free biosensor

Analytical modeling of dielectric modulated negative capacitance MoS2 field effect transistor for next‐generation label‐free biosensor

Analytical Modelling of Dielectric Modulated Negative Capacitance MoS2-FET for Biosensor Application

Analytical Modelling of Dielectric Modulated Negative Capacitance MoS2-FET for Biosensor Application

Contact Info

Product

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Analytical modeling of dielectric modulated negative capacitance MoS₂ field effect transistor for next‐generation label‐free biosensor

Analytical modeling of dielectric modulated negative capacitance MoS₂ field effect transistor for next‐generation label‐free biosensor