A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication

Abstract

Abstract-This paper presents a monolithic optical detector, consisting of an integrated photodiode and a preamplifier in a standard 0.18-m CMOS technology. A data rate of 3 Gb/s at BER 10 11 was achieved for = 850 nm with 25-W peak-peak optical power. This data rate is more than four times than that of current state-of-the-art optical detectors in standard CMOS reported so far. High-speed operation is achieved without reducing circuit responsivity by using an inherently robust analog equalizer that compensates (in gain and phase) for the photodiode roll-off over more than three decades. The presented solution is applicable to various photodiode structures, wavelengths, and CMOS generations.

Ultrafast Imaging in Standard (Bi)CMOS Technology

“…It has been shown in (Radovanovic et al 2005;) that a P DIFF -N WELL photodiode with a screening N WELL -P SUB photodiode features the fastest overall bandwidth among all basic photodiode structures in bulk CMOS technologies, which can exceed 1 GHz at a wavelength of 850 nm. Unfortunately, the responsivity of the screened photodiodes is 10 times lower than that of P DIFF -N WELL -P SUB double photodiodes at 850 nm and 6 times lower at 650 nm.…”

“…However, the roll-off of the N WELL -P SUB photodiode at long wavelengths starts at about 1 MHz, which requires a 3 rd order equalizer to achieve an effective compensation up to 1 GHz (Radovanovic et al 2005). A single-stage, 3 rd order equalizer requires not less than 2 transistors, 3 capacitors and 5 resistors.…”

6.25-Gb/s Optical Receiver Using A CMOS-Compatible Si Avalanche Photodetector

“…For short-distance optical communications such as optical access networks and optical interconnects, CMOS compatible photodetectors (CMOS-PDs) have been widely investigated to enable cost-effective implementation of large-capacity data transmission systems [1][2][3][4][5][6][7][8]. CMOS technology provides not only low-cost and highvolume fabrication but also a single chip solution for optical receivers with well developed CMOS circuits.…”

“…However, these approaches require process modification or special substrates, resulting in additional fabrication costs. With a standard CMOS process, equalizer circuits for compensating low-speed PD were developed [4]. This scheme, though, requires knowledge in accurate photodetector responses and complicates the receiver circuit design.…”

Integrated optical modules for miniature Raman spectroscopy devices

“…The size and cost of such a device can be reduced further, if all the optics and electronics components mentioned above are fabricated by using micro/nano technology. The first steps towards miniaturisation of Raman spectroscopy is to realize light excitation, collection and wavelength (de)multiplexing with a very fine resolution (2.22 cm -1 ) by integrated optics [16]; and high speed electronics monolithically integrated with Si photodetectors can be implemented using standard CMOS technology [17]. Furthermore, these optics and electronics chips should be integrated in an efficient way to make an alignment-free and robust measurement device.…”