A 3 kV Schottky barrier diode in 4H-SiC

Wahab, Q.; Kimoto, T; Ellison, A.; Hallin, Christer; Tuominen, M.; Yakimova, Rositsa; Henry, Anne; Bergman, J.P.; Janzén, Erik

doi:10.1063/1.120782

Cited by 74 publications

(22 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The use of metals such as Ni that form a large barrier height on SiC allow operation of diodes at higher temperature with lower power losses compared to metals such as Ti which have relatively smaller barrier height to SiC, as discussed later. Since our first reports, several other groups have adopted the metal overlap structure using Ni for both Schottky and ohmic contact to achieve high voltage breakdown on SiC [16], [17].…”

mentioning

confidence: 99%

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena

Steckl

1999

IEEE Trans. Electron Devices

193

View full text Add to dashboard Cite

Abstract-We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I0V ) temperature and capacitance-voltage (C0V ) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10 6 to 10 7 at 27 C and in excess of 10 6 up to 300 C.

show abstract

mentioning

confidence: 99%

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena

Steckl

1999

IEEE Trans. Electron Devices

193

View full text Add to dashboard Cite

show abstract

“…While some of the data points have been measured at reverse biases near the breakdown voltage where pre-avalanche multiplication has a significant contribution to the leakage current, the leakage current of all of the Schottky devices are orders of magnitude higher than the theoretical prediction, even on devices with edge terminations. Recently, a large improvement in the leakage current was achieved on Schottky rectifiers fabricated on 4H-SiC films grown using a hot-wall CVD technique (Wahab, et al 1998), indicating that bulk defects, rather than surface passivation, may be responsible for a major part of the leakage current. 100 0 300 400 500 600 700 Temperature (K) 800 Fig.…”

Section: Schottky Rectifiersmentioning

confidence: 99%

“…When the BV exceeds 1000V, the drift resistance starts to be the main limiting factor and the increase in R d is a direct consequence of the increase in drift layer thickness and reduction in drift layer doping. We have also included recent published experimental results (Bhatnagar, et al 1992;Raghunathan, et al 1995;Ueno, et al 1995;Weitzel, et al 1996;Mitlehner, et al 1997;Saxena & Steckl 1997;Sing & Palmour 1997;Wahab, et al 1998; in Fig. 7.10.…”

Section: Schottky Rectifiersmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

View full text Add to dashboard Cite

Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

show abstract

“…When partly coated susceptors are used, incorporation of impurities such as Al, B, and Ti may take place, however, this can be overcome by the use of fully SiC pre-coated susceptors (Table 1). A systematic investigation of the growth parameters (namely temperature, C/Si ratio and pressure) influencing the nitrogen incorporation efficiency enabled us to achieve residual n-type doping as low as 2·10 14 cm − 3 and 5-6·10 14 cm − 3 on Si-and C-face substrates, respectively. As detailed in Ref.…”

Section: Morphologymentioning

confidence: 99%

“…In order to evaluate potential side effects of the high temperature CVD chimney process on device performance, Au-Schottky diodes using a MOS edge termination [14] were processed on a 30 mm thick C-face epilayer (R 20 mm h − 1…”

Section: De6ice Characteristicsmentioning

confidence: 99%