A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

“…Other studies also identified charge detrapping as the dominant error source in highly-cycled NAND samples [242]. To overcome this limitation, several solutions have been proposed, including a dummy read [243] or a moving reference [244] scheme and a self-healing approach [245], where a built-in heater in the proximity of the tunnel oxide is used to accelerate damage recovery and prolong the endurance. The insertion of specific block healing cycles during run time was shown to increase lifetime and performance of NAND devices [246], suggesting that distributed healing schemes could be devised to maximize their efficacy while reducing the energy dissipation of such cycles [247].…”

Challenges and limitations of NAND flash memory devices based on floating gates

“…4) Randomization: In data randomization (or scrambling) of Fig. 9 (a), as well as even distribution of the cells into each programmed level [6], neighboring cell's programmed level should be considered to reduce the interference to victim cell. As shown in Fig.…”

“…Various operation schemes, such as the modified incremental step pulse program, moving read scheme, virtual negative method and P/E pulse slope control, have been already proposed to improve reliability characteristics [5][6][7]. In this work, the newly adopted operation algorithms such as intelligent incremental step pulse erase (ISPE), various biasing in grouped W/Ls and virtual negative read (VNR) and their results will be exhibited.…”

A High Performance Co-design of 26 nm 64 Gb MLC NAND Flash Memory using the Dedicated NAND Flash Controller

“…As well-known with moving read scheme, this method is wide usage of initial program cell state to adjust and compensate read-bias judging from the amount of left shifted cell distribution. [2]. It's possible to compensate a retention drawback within small Vth window using adjusting read 2 or read 3 sensing level.…”

“…According to technology shrink drawback of interference. [2,3] This NAND Flash memory has the average parameter of tPROG is measured in 1361 µs. The performance is calculated in 12.7 MB/s using multi plane and cache program operation in Fig.…”