A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

Yoshida, Harumasa; Yamashita, Yoshifumi; Kuwabara, Masakazu; Kan, Hirofumi

doi:10.1038/nphoton.2008.135

Cited by 219 publications

(148 citation statements)

References 21 publications

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“…The dislocation density of crack-free AlGaN was observed between 1.8-6.0 × 10 8 /cm 2 from cathodoluminescence (CL) dark spots [9]. From these results of low dislocation AlGaN grown on inclined GaN facet, the various UV-LDs between 336-360 nm with AlGaN/AlGaN or GaN/AlGaN MQWs were demonstrated [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 83%

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Kim

Bae

et al. 2017

Appl. Sci. Converg. Technol.

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The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of 950 o C and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crackfree and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the 4 μm -thick Al 0.2 Ga 0.8 N was crack-free over entire 2-inch wafer. The dislocation density of Al 0.2 Ga 0.8 N was as low as ~7.6 × 10 8 /cm 2 measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/ AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with 5 μm-wide and 700 μm-long cavity for electrical properties. The turn on voltage was below 5 V and the resistance was55 Ω at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

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Section: Introductionmentioning

confidence: 83%

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Kim

Bae

et al. 2017

Appl. Sci. Converg. Technol.

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“…89 These UV lasers are normally based on gallium nitride (GaN). Power levels of UV diodes laser are usually limited.…”

Section: Uv Phototherapy For Skin and Other Disordersmentioning

confidence: 99%

Ultraviolet Radiation in Wound Care: Sterilization and Stimulation

Gupta

Avci

Dai

et al. 2013

Advances in Wound Care

130

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“…In particular, heterostructures based on Al x Ga 1−x N/GaN represent the building-blocks for a number of current (opto)electronic devices, including blue and white LEDs [3,4], laser diodes and lasers [5], high-power- [6,7] and highelectron-mobility-transistors (HEMTs) [8,9]. Beside the tunability of the bandgap from the 3.4 eV of GaN to the 6.2 eV in AlN at room temperature, there is between GaN and AlN a 2.5% lattice mismatch, allowing the pseudomorphic growth of Al x Ga 1−x N layers with a biaxial tensile strain on GaN.…”

Section: Introductionmentioning

confidence: 99%

Controlling a three dimensional electron slab of graded AlxGa1−xN

Adhikari

Capuzzo

et al. 2016

Applied Physics Letters

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Polarization induced degenerate n-type doping with electron concentrations up to ∼10 20 cm −3 is achieved in graded Al x Ga 1−x N layers (x: 0%→37%) grown on unintentionally doped and on n-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy and electron energy loss spectroscopy confirm the gradient in the composition of the Al x Ga 1−x N layers, while magnetotransport studies reveal the formation of a three dimensional electron slab, whose conductivity can be adjusted through the GaN(:Si) buffer/reservoir. * rajdeep.adhikari@jku.at † alberta.

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A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

Cited by 219 publications

References 21 publications

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Ultraviolet Radiation in Wound Care: Sterilization and Stimulation

Controlling a three dimensional electron slab of graded AlxGa1−xN

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