We have demonstrated laser operation of an AlGaN multiple-quantum-well (MQW) laser diode (LD) with a peak wavelength of 336.0 nm under pulsed current mode at room temperature. The LD was fabricated on a low-dislocation-density Al0.3Ga0.7N grown on a sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth method. The laser emission is strongly transverse electric polarized with a peak output power of 3 mW and a differential external quantum efficiency of 1.1%. This demonstration of the LD lasing in ultraviolet-AII spectral band (320–340 nm) suggests that the AlGaN MQW LDs can be potent devices opening a path to deeper ultraviolet LDs.

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Al0.25Ga0.75N films were grown on a grooved‐Al0.25Ga0.75N/ AlN/sapphire template by MOVPE. The dislocation density on the grooved areas was as low as 1 × 108 cm–2. We fabricated a UVA light‐emitting diode grown on such an AlGaN underlying layer exhibiting an output power of 12 mW at a DC current of 50 mA with a peak emission wavelength of 345 nm, which corresponds to an external quantum efficiency of 6.7%. This efficiency is the highest reported to date in this wavelength region. We also fabricated a 358 nm UVA laser diode (LD) using a GaN/AlGaN MQW active layer grown on an AlGaN underlying layer. This UV LD exhibits a threshold current of 73 mA and a corresponding current density of 3.8 kA/cm2 at 7 °C. The characteristic temperature T0 was 174 K in the temperature range of 7–27 °C. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

We have succeeded in fabricating ultraviolet (UV) GaN/AlGaN laser diodes without any crack generation on a whole 2-in. sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. The UV laser diodes lased in the peak wavelength range from 355.4 to 361.6 nm under a pulsed current operation at room temperature. We have also investigated both parameters, material gain and optical-internal loss in GaN/AlGaN multiple quantum wells (MQWs). The actual threshold currents of the UV laser diodes were practically in agreement with the estimated threshold current from these parameters. This layer structure is one of the solutions for the purpose of high-yield production of UV photonic devices.