A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency

Therrien, R.; Singhal, Sameer; Johnson, J. W.; Nagy, W.; Borges, R.; Chaudhari, A.; Hanson, A.W.; Edwards, Andrew; Marquart, J.; Rajagopal, P.; Park, C.; Kizilyalli, I.C.; Linthicum, K. J.

doi:10.1109/iedm.2005.1609410

Cited by 31 publications

(23 citation statements)

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“…The use of a field electrode connected with the source of transistor, on the contrary, cuts down the parasitic capacity Cgd and somewhat increases the cut-off frequencies and maximum available (or stable) gain of transistor. The construction of such FP electrode is shown in Fig.7 (Therrien et al, 2005). When such electrode was inserted (Therrien et al, 2005) transistor's Cgd was decreased by 30%, while maximum stable gain (MSG) increased by 1,5 dB.…”

Section: The Ways For Further Improvementmentioning

confidence: 99%

“…The construction of such FP electrode is shown in Fig.7 (Therrien et al, 2005). When such electrode was inserted (Therrien et al, 2005) transistor's Cgd was decreased by 30%, while maximum stable gain (MSG) increased by 1,5 dB. Breakdown voltage also increased significantly and there was also 1,5 times growth of output pulse power density at Vd = 48 V. In the same way the insertion of a field electrode, connected with the source, affected the parameters of transistor produced with the use of other technologies.…”

Section: The Ways For Further Improvementmentioning

confidence: 99%

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Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

Kistchinsky¹

2011

Ultra Wideband Communications: Novel Trends - System, Architecture and Implementation

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Section: The Ways For Further Improvementmentioning

confidence: 99%

Section: The Ways For Further Improvementmentioning

confidence: 99%

Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

Kistchinsky¹

2011

Ultra Wideband Communications: Novel Trends - System, Architecture and Implementation

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“…Device specifications and the cross-sectional geometry for the GaN-on-Si HEMT are listed below and shown in Figure 2.1, respectively, and are derived from [14], [15], [16], and [17]. A physical picture of the NPTB00004 die is shown in Figure 2.2.…”

Section: Research Focusmentioning

confidence: 99%

“…HEMTs to achieve higher breakdown voltages, lower gate leakage currents, higher cutoff frequencies, higher maximum available gains, and lower gate-drain capacitances [7], [15].…”

Section: Research Focusmentioning

confidence: 99%

“…• 490nm SiN X passivation layer and SiN X encapsulation layer As described in [12], [15], [16], and [17] the NPTB00004 was developed using metal-organic chemical vapor deposition (MOCVD). Before the primary semiconductor barriers were grown, an AlN nucleation layer was added to prevent unwanted Ga-Si interactions and an AlGaN transition layer was included to provide an increased thermal and lattice match between the GaN layer and Si substrate.…”

Section: Research Focusmentioning

confidence: 99%

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DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors

Bloom¹

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Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and costeffectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.In this thesis, the DC, RF, and thermal characteristics of GaN HEMTs grown on Si-substrates will be investigated through a series of accelerated lifetime experiments. A figure of merit known as the critical voltage is explored and used as the primary means by which the GaN-on-Si devices are electrically strained. The critical voltage is defined as the specific voltage bias by which a sudden change in device performance is experienced due to a deformation of the target GaN HEMT's epitaxial structure. Literature on the topic details the inevitable formation of pits and cracks localized under the drain-side of the gate contact that promote electrical degradation of the devices via the inverse piezoelectric effect. Characteristic changes in device performance due to high field strain are recorded and physical mechanisms behind observed degraded performance are investigated.The study assesses the performance of roughly 60 GaN-on-Si HEMTs in four experimental settings. The first experiment investigates the critical voltage of the device in the off-state mode of operation and explores device recovery post-stress. The second experiment analyzes alterations in DC and RF performance under varying thermal loads and tracks the dependence of the critical voltage on temperature. The third experiment examines electron trapping within the HEMTs as well as detrapping methodologies. The final experiment links the changes in RF performance induced by high field strain to the small-signal parameters of the HEMT. Findings from the research conclude the existence of process-dependent defects that originate during the growth process and lead to inherent electron traps in unstressed devices. Electron detrapping due to high electric field stress applied to the HEMTs was observed, potentially localized within the AlGaN layer or GaN buffer of the HEMT. The electron detrapping in turn contributed to drain current recovery and increased unilateral performance of the transistor in the RF regime. Thermal experiments resulted in a positive shift in critical voltage, which enhanced gate leakage current at lower gate voltage drives. v ACKNOWLEDGMENTS I would like to first and foremost thank Dr. Dennis Derickson for giving me the opportunity to work on this research initiative. Without Dr. Derickson's guidance and mentorship through the entirety of the project, the...

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Appendix C: Wafer Process Engineering

Padullaparthi¹

2021

VCSEL Industry

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A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency

Cited by 31 publications

References 2 publications

Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors

Appendix C: Wafer Process Engineering

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