A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

Nakamura, Tomonori; Miyanagi, Toshiyuki; Kamata, Isaho; Jikimoto, Tamotsu; Tsuchida, Hidekazu

doi:10.1109/led.2004.841473

Cited by 45 publications

(30 citation statements)

References 13 publications

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“…Data are taken from Refs. [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ].…”

Section: Figurementioning

confidence: 99%

Materials and Processes for Schottky Contacts on Silicon Carbide

2021

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Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.

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“…Data are taken from Refs. [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ].…”

Section: Figurementioning

confidence: 99%

Materials and Processes for Schottky Contacts on Silicon Carbide

2021

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“…For these phenomena, the existence of the interfacial layer between the metal and semiconductor has an influence [8]. Based on this concept, many kinds of metals and alloys have been adopted as the Schottky metal in the SiC SBD structure [9][10][11][12][13]. Among the kinds of Schottky metals, Ti and Ni are the most frequently utilized metals, and for the contact with n-type 4H-SiC, their SBH values are predicted to be approximately 0.9 and 1.6 eV, respectively, by the Schottky-Mott relationship.…”

Section: Introductionmentioning

confidence: 99%

“…By analogy with this tendency, a junction having moderate SBH could be applied to a device that has the balanced performance at the on and off states. Nakamura et al suggested that the Schottky contact with an SBH of 1.2-1.3 eV is imperative for the fabrication of a high-efficiency and high-voltage 4H-SiC SBD [13].…”

Section: Introductionmentioning

confidence: 99%

Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact

Hong

Kim

2019

Coatings

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The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited Mo/SiC Schottky contacts possessed Schottky barrier heights of 1.17 and 1.22 eV, respectively. The Schottky barrier heights of the diodes were decreased to 1.01 and 0.91 eV after annealing at 400 °C for 30 min. The ideality factor was increased from 1.14 and 1.08 to 1.51 and 1.41, respectively. This implies the presence of non-ideal behaviors due to a current transport mechanism other than ideal thermionic emission, and the non-ideal behaviors increased as a result of excessive thermal annealing. In contrast, only a negligible change was observed in the crystallographic characteristics. This result suggests that the reason for the deviation from the ideal rectifying characteristics of the Mo/SiC Schottky contact through the annealing process was the variation in the current transport mechanism, including recombination, tunneling, and/or minority carrier injection.

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“…The commercial availability of 4inch (1 inch = 2.54 cm) wafer of 4H-SiC and the continuing efforts in scaling up SiC substrates by a number of companies are creating the basis for an emerging SiC power electronic industry. [8][9][10][11][12][13][14][15] The 4H-SiC Schottky barrier diode (SBD) as one of the major unipolar devices, is expected to replace the Si bipolar rectifier in a range from 600 V to 6500 V in the future due to its fast switching speed and low switching power dissipation. One of the typical applications of SiC SBDs is to serve as a fast diode employed in a power-factor-correction circuit of switching mode power supply.…”

Section: Introductionmentioning

confidence: 99%

“…Since the first 1-kV SiC Schottky barrier diode with a low specific on resistance was demonstrated in 1993, [20,21] sustained efforts have been made to develop the SiC power Schottky barrier diode device technology and many 4H-SiC high voltage Schottky barrier diode devices have been demonstrated. [7][8][9][10][11][12]16,19,22] In the present paper, we report our newly developed high performance 1.…”

Section: Introductionmentioning

confidence: 99%

Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power SBDs

et al. 2016

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In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes(SBDs)are fabricated with three N-type drift layer thickness values of 10 µm, 30 µm, and 50 µm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H-SiC theoretical limit line. The best achieved breakdown voltages (BVs) of the diodes on the 10 µm, 30 µm, and 50 µm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances (R on−sp ) are 2.1 mΩ • cm 2 , 7.34 mΩ • cm 2 , and 30.3 mΩ • cm 2 , respectively.

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A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

Cited by 45 publications

References 13 publications

Materials and Processes for Schottky Contacts on Silicon Carbide

Materials and Processes for Schottky Contacts on Silicon Carbide

Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact

Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power SBDs

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