A $4$ × $4$ Electrooptic Silicon Photonic Switch Fabric With Net Neutral Insertion Loss

Dupuis, N.; Doany, F. E.; Budd, R.; Schares, Laurent; Baks, Christian; Kuchta, Daniel M.; Hirokawa, Takako; Lee, Benjamin G.

doi:10.1109/jlt.2019.2945678

Cited by 17 publications

(10 citation statements)

References 23 publications

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“…It should be noted that a quantum dot active layer is suitable for integration with silicon because it can be operated at high temperature [56]. A semiconductor optical amplifier (SOA) was flipchip bonded to compensate for the losses in silicon photonic switches [57,58].…”

Section: Active Component Integrationmentioning

confidence: 99%

Silicon photonics platforms for optical communication systems, outlook on future developments

Tsuda

2020

IEICE Electron. Express

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This paper reviews recent progress in silicon photonics and compares it with other optical device platforms. The key components for optical communication systems, including arrayed waveguide gratings, optical switches, modulators and optical functional devices fabricated on silicon photonics platforms are explained. The integration of III-V compounds, lithium niobate, polymers, phase change and other functional materials are necessary to strengthen silicon photonics platforms. These are also reviewed, and the feasibilities are discussed. Finally, I express my personal view as to the best research direction for silicon photonics.

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Section: Active Component Integrationmentioning

confidence: 99%

Silicon photonics platforms for optical communication systems, outlook on future developments

Tsuda

2020

IEICE Electron. Express

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“…Owing to the direct bandgap and inherent stimulated emission of III-V materials, early prototypes of lossless OCSs were integrating several Semiconductor Optical Amplifiers (SOAs) in 4×4 [21], 8×8 [22] and 16×16 [18] layouts on InP platform for nearly two decades and are more recently proposed as Add/Drop switches in Metro networks with channel-rates up to 40 Gb/s [24] [25]. Towards bridging the gain-properties of III-V materials with the large-integrability and cost-benefits of SiPho, arrays of SOAs can be hybridly-integrated next to SiPho switching matrices for DCs, demonstrating 4×4 [26] and 8×8 port counts [7][27] [28] with up to 33 Gbd channel-rates. Yet, hybridintegration requires challenging assembly processes to align and bond dies of two different waveguide platforms, resulting in increased complexity and lower device yield [8], [29]- [32], while most importantly SOAs induce non-linear distortions and inter-channel cross-talk between multiple WDM data-streams, which may severely degrade the signal quality [7], the input dynamic range [27] and multiple channel-operation [33].…”

Section: Introductionmentioning

confidence: 99%

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform

Vagionas

Tsakyridis

Chrysostomidis

et al. 2022

J. Lightwave Technol.

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During the past years, incorporating Οptical Circuit Switches (OCS) in high-bandwidth optical interconnects has outlined the critical challenges of achieving ultra-low fiber-to-fiber losses (FtF) and constantly decreasing costs for Photonic Integrated Circuits (PICs). This work aims to simultaneously satisfy both the low-loss and low-cost requirements by bringing two of the most successful example-technologies in the history of optics, i.e. EDFAs and ROADMs to a common Si3N4 platform. In particular, the proof-of-concept operation of a lossless four-port Silicon Photonic (SiPho) ROADM is experimentally presented for the first time based on two PIC prototypes on a Si3N4 platform, including a monolithic-integrated 5.9 cm-long spiral Al2O3:Er 3+ Erbium Doped Waveguide Amplifier (EDWA) with 15 dB signal enhancement capabilities and a lattice MZI-interleaver ROAM layout with 100 GHz channel spacing. Considering an ultra-low 2.55 dB FtF loss of the ROADM along with 0.5 dB loss for each of the two coupling-interfaces between the Si3N4 and Al2O3:Er 3+ waveguide layers, a cumulative loss of 3.55 dB is obtained, which can be compensated by the 3.6 dB net gain provided by the EDWA to four incoming WDM signals of -1.7 dBm/channel. Lossless wavelength-routing operation is validated at up to 240 Gb/s WDM (4λ × 60Gb/s) data traffic, while the cascadability of the proposed device is benchmarked in a realistic two-stage optical bus topology with 10 km single mode fiber that selectively routes 4λ × 25Gb/s WDM data channels to any of its eight Drop output ports. This work forms the first demonstration of lossless ROADM operation exclusively on SiPho technology, highlighting a promising roadmap for large scale SiPho switching matrices and more complex PICs co-integrated with EDWAs.

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“…[2][3][4][5][6] Silicon photonic switches are particularly attractive for such applications, and several research groups have developed silicon photonics switches based on cascaded Mach-Zehnder interferometers. [7][8][9][10][11][12][13][14] However, their optical losses increase rapidly with port count, limiting the scalability of these switches.…”

Section: Introductionmentioning

confidence: 99%

“…Since there are two directional couplers per switch unit cell, the extinction ratio for switching is 51.6 dB. The switching devices using directional couplers [7][8][9][10][11][12][13] often suffer from optical power leakage or loss due to the dimensional shift of the directional couplers during fabrication step. However, the gap-adjustable directional coupler allows flexible tuning of the gap and thus allows compensating the dimensional shift.…”

Section: Introductionmentioning

confidence: 99%

32 × 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry

Han

Béguelin

Ochikubo

et al. 2021

J. Optical Microsystems

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We report on a 32 × 32 silicon photonic micro-electro-mechanical-system (MEMS) switch with gap-adjustable directional couplers. The switch is fabricated on 200-mm silicon-oninsulator wafers in a commercial complementary metal-oxide-semiconductor (CMOS) foundry. The fabricated device has a maximum on-chip loss of 7.7 dB and an extinction ratio of 50.8 dB. The switching voltage is 9.45 V and the 20-dB bandwidth is 28.7 nm. Our work shows a promising path for mass production of silicon photonic MEMS switches in commercial CMOS foundries.

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A $4$ × $4$ Electrooptic Silicon Photonic Switch Fabric With Net Neutral Insertion Loss

Cited by 17 publications

References 23 publications

Silicon photonics platforms for optical communication systems, outlook on future developments

Silicon photonics platforms for optical communication systems, outlook on future developments

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform

32 × 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry

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A $4$ × $4$ Electrooptic Silicon Photonic Switch Fabric With Net Neutral Insertion Loss

Cited by 17 publications

References 23 publications

Silicon photonics platforms for optical communication systems, outlook on future developments

Silicon photonics platforms for optical communication systems, outlook on future developments

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si3N4 Platform

32 × 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry

Contact Info

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Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform