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We present a 4x4 spatially non-blocking Mach-Zehnder based silicon optical switch fabricated using processes fully compatible with standard CMOS. We successfully demonstrate operation in all 9 unique switch states and 12 possible I/O routing configurations, with worst-case cross-talk levels lower than -9 dB, and common spectral bandwidth of 7 nm. High-speed 40 Gbps data transmission experiments verify optical data integrity for all input-output channels.

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Vibrational energy relaxation (T1) of the CN− ion is reported for NaCN in saturated H2O/D2O and dilute H2O solutions at room temperature. Time domain measurements of the v = 1, 2080 cm−1 vibration shown T1 is on the order of a few picoseconds. The relaxation time increases with dilution and is apparently sensitive to cation (Na+,K+) and local solution structure.

We have measured the dependence of the free-carrier lifetime on 0 + ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3 X 10 J4 cm-2 the measured carrier lifetime reached a limit of 600 fs.