A 4-bit miniature X-band MEMS phase shifter using switched-LC networks

“…However, compared with passive TTD circuits, these active solutions consume a certain power meanwhile exhibiting a limited linearity performance. Switch-based solutions such as a switched-TL and a switched LC-network provide an alternative way to achieve low insertion loss and a large delay tuning range while keeping Z0 constant when configuring TTD [9], [10]. Copyright c 2019 The Institute of Electronics, Information and Communication Engineers illustrates a switched line structure typically used in TTD lines.…”

Section: Design Considerationsmentioning

confidence: 99%

7-Bit Multilayer True-Time Delay up to 1016ps for Wideband Phased Array Antenna

Yoon

Nam

2019

IEICE Trans. Electron.

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We present a seven-bit multilayer true-time delay (TTD) circuit operating from 1 to 7 GHz for wideband phased array antennas. By stacking advanced substrates with low dielectric loss, the TTD with PCB process is miniaturized and has low insertion loss. The signal vias with surrounding ground vias are designed to provide impedance matching throughout the band, allowing the overall group delay to be flat. The standard deviation of the TTD for all states is below 19 ps, which is 1.87% of the maximum group delay. The maximum delay is 1016 ps with resolution of 8 ps. The implemented TTD is 36.6 × 19.4 mm 2 and consumes 0.65 mW at 3.3 V supply for all the delay states. The measured input/output return loss is better than 12.1 dB for the band of 1-7 GHz.

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“…From an implementation point of view, monolithic integration of RF-MEMS switch with other RF circuits is preferred to lower the cost and to improve the fabrication yield. Conventional MEMS monolithic phase shifters were composed mainly by the surface-micromachining on a compound semiconductor substrate such as GaAs [5], resulting in limited degrees of freedom in 3-dimentional structures and high material cost. Thanks to the recent process innovations [6,7], bulk-micromachining and gold-electroplating processes have been combined to integrate RF passive elements with MEMS micro actuators in a single silicon chip.…”

Section: Introductionmentioning

confidence: 99%

A 12GHz bulk-micromachined RF-MEMS phase shifter by SOI layer-separation design

Yamane

Sun

Kawasaki

et al. 2010

IEICE Electron. Express

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A novel design of monolithic RF-MEMS (radio frequency micro electro mechanical systems) phase shifter for Ku-band has been successfully developed based on a mechanically movable switched-line waveguide. The structures of MEMS actuators, switch contacts, and MEMS coplanar waveguides have been optimized in terms of insertion loss by utilizing the both sides of an SOI (silicon on insulator) wafer and by using the SOI layer-separation technique, where microwave waveguides and actuators are allocated on the handle wafer and the active layer of SOI, respectively. RF performance was measured on a developed 1-bit MEMS phase shifter, and we obtained insertion loss of −1.64 to −1.82 dB/bit, return loss of −8.92 to −12.60 dB/bit, and isolation of −40.29 dB/bit at 12.5 GHz. Phase-error for the 22.5-degree phase shifter was found to be 5.5 degree/bit at 12.5 GHz.

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A 4-bit miniature X-band MEMS phase shifter using switched-LC networks

Cited by 14 publications

References 10 publications

Fully Packaged 4-bit 100 ps RFMEMS Time Delay

Fully Packaged 4-bit 100 ps RFMEMS Time Delay

7-Bit Multilayer True-Time Delay up to 1016ps for Wideband Phased Array Antenna

A 12GHz bulk-micromachined RF-MEMS phase shifter by SOI layer-separation design

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