A 40 Gbit/s optical link on a 300-mm silicon platform

Abstract

We demonstrated 40 Gbit/s optical link by coupling a silicon (Si) optical modulator to a germanium (Ge) photo-detector from two separate photonic chips. The optical modulator was based on carrier depletion in a pn diode integrated in a 950-µm long Mach-Zehnder interferometer. The Ge photo-detector was a lateral pin diode butt coupled to a silicon waveguide. The overall loss, which is mainly due to coupling (3 grating couplers times ~4 dB) was estimated to be lower than 18 dB. That also included modulator loss (4.9-dB) and propagation loss (<1 dB/cm). Both optoelectronic devices have been fabricated on a 300-mm CMOS platform to address high volume production markets.

High-quality crystalline yttria-stabilized-zirconia thin layer for photonic applications

“…To meet the trade-off between thickness and crystalline quality in our YSZ layers, we chose a thickness of 250 nm, which allows guided modes around 1300-nm wavelength. Note that this wavelength is of great interest for Datacom applications, e.g., in big data centers [32]. Considering this thickness, either high-quality (001) or (111)-oriented YSZ films can be grown according to the substrate annealing.…”

Effect of Radiation on a Mach–Zehnder Interferometer Silicon Modulator for HL-LHC Data Transmission Applications

“…The modulators irradiated in this work were fabricated on a 300 mm CMOS platform and are based on lateral pn junctions [3] integrated into a 2.183-mm-long Mach-Zehnder interferometer. A schematic of the lateral pn phase-shifting diode is shown in Fig.…”

“…3. Schematic view of the lateral pn phase-shifting diode used in the irradiated modulators after [3]. hard voltage driver, and finally packaging the components in a low-mass and nonmagnetic package suitable for High Energy Physics (HEP) applications.…”

Electro-optic modulation in bulk silicon using surface plasmon resonance

“…Silicon on insulator (SOI) wafers comprising of a thick buried oxide (BOx) layer have become the most popular platform for monolithic integration of silicon photonic devices with passive optical components including ultra-low loss waveguides [6] and active optical components such as high speed electro-optic modulators [7] and photodetectors [8]. However, on cost and performance grounds, bulk silicon is used in most electronic applications, such as microprocessors, high volume and high density memories etc.…”