A 40nm CMOS Ultra-Wideband Low Noise Amplifier Design

Wu, Jiaqian; Liu, Zhangfa

doi:10.2991/wcnme-19.2019.9

Cited by 4 publications

(7 citation statements)

References 1 publication

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“…In Figure 1 b, a low-noise amplifier with resistance feedback is represented, simplified as a single-stage CS (common-source) amplifier. This configuration yields the following impedance and noise figure performance [ 8 ].

…”

Section: Lna Design Using Rc Feedback and Inductively Peaking Techniquementioning

confidence: 99%

“…However, for Cascode low-noise amplifiers intended for 5G NR, where bandwidth limitations exist, techniques for bandwidth extension become essential to achieve the desired bandwidth. Various techniques, such as distributed, coupled/resistive feedback, series peaking, double L-type matching network, and gm-boosting, are employed for this purpose [ 6 , 7 , 8 , 9 , 10 , 11 ]. In the case of the representative RC feedback technique, the bandwidth of the low-noise amplifier is determined by the transistor’s Ft (transition frequency) and the feedback loop.…”

Section: Introductionmentioning

confidence: 99%

“…To address this issue, additional techniques are employed to minimize performance degradation. References [ 7 , 8 , 9 ] demonstrate excellent performance over a wide bandwidth but exhibit a high noise figure of 4.5 dB. Alternative methods, peaking techniques, involve additional components such as inductors or T-coils and serial/parallel connections for bandwidth extension.…”

Section: Introductionmentioning

confidence: 99%

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Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology

Kim,

Yoo

2024

Sensors

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This paper presents the design of a low-noise amplifier (LNA) with a bypass mode for the n77/79 bands in 5G New Radio (NR). The proposed LNA integrates internal matching networks for both input and output, combining two LNAs for the n77 and n79 bands into a single chip. Additionally, a bypass mode is integrated to accommodate the flexible operation of the receiving system in response to varying input signal levels. For each frequency band, we designed a low-noise amplifier for the n77 band to expand the bandwidth to 900 MHz (3.3 GHz to 4.2 GHz) using resistive–capacitance (RC) feedback and series inductive-peaking techniques. For the n79 band, only the RC feedback technique was employed to optimize the performance of the LNA for its 600 MHz bandwidth (4.4 GHz to 5.0 GHz). Because wideband techniques can lead to a trade-off between gain and noise, causing potential degradation in noise performance, appropriate bandwidth design becomes crucial. The designed n77 band low-noise amplifier achieved a simulated gain of 22.6 dB and a noise figure of 1.7 dB. Similarly, the n79 band exhibited a gain of 21.1 dB and a noise figure of 1.5 dB with a current consumption of 10 mA at a 1.2 supply voltage. The bypass mode was designed with S21 of −3.7 dB and −5.0 dB for n77 and n79, respectively.

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…”

Section: Lna Design Using Rc Feedback and Inductively Peaking Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology

Kim,

Yoo

2024

Sensors

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“…In this paper, a self-biased cascode structure was adopted, which introduces the AC voltage 𝑉 of the drain of M2 into the grid 𝑉 , and the bias voltage of 𝑉 is realized through 𝑅 -𝐶 . This structure can reduce one DC signal source while reducing the voltage difference between the M2 drain and grid and improving the output signal swing [9]. The size of the transistor is 4*75.…”

Section: Introductionmentioning

confidence: 99%

An S-band MMIC LNA in GaAs 0.15-μm pHEMT

Liang,

2023

J. Phys.: Conf. Ser.

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The study adopts a monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) applied in S-band was designed using ADS simulation software, GaAs 0.15-um pseudomorphic high electron mobility transistor (pHEMT) process. The LNA small signal gain is greater than 30.8 dB, gain flatness is ±0.45 dB, noise coefficient is less than 1.5 dB, input and output return loss is greater than 10 dB, and the chip area is 1.2*2.4 mm2. The low noise amplifier is composed of a two-stage cascade structure. Gain flatness, gain control, and bandwidth broadening are improved by RLC negative feedback network. The minimum noise coefficient circle and maximum gain circle are narrowed by adding negative feedback to achieve better noise coefficient and gain.

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“…where the response of |𝑆 | includes two zero points. ꞷ 02 is as follows [7]: By expressing the current flowing into the R FB resistor as I x , the above equation can be obtained. C gs and g m are the gate-source capacitance and the transconductance of the transistor, respectively, and R L is the load resistance.…”

mentioning

confidence: 99%

RF-SOI Low-Noise Amplifier Using RC Feedback and Series Inductive-Peaking Techniques for 5G New Radio Application

Kim

Yoo

2023

Sensors

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This paper presents a low-noise amplifier (LNA) with an integrated input and output matching network designed using RF-SOI technology. This LNA was designed with a resistive feedback topology and an inductive peaking technology to provide 600 MHz of bandwidth in the N79 band (4.4 GHz to 5.0 GHz). Generally, the resistive feedback structure used in broadband applications allows the input and output impedance to be made to satisfy the broadband conditions through low-impedance feedback. However, feedback impedance for excessive broadband characteristics can degrade the noise performance as a consequence. To achieve a better noise performance for a bandwidth of 600 MHz, the paper provided an optimized noise performance by selecting the feedback resistor value optimized for the N79 band. Additionally, an inductive peaking technique was applied to the designed low-noise amplifier to achieve a better optimized output matching network. The designed low-noise amplifier simulated a gain of 20.68 dB and 19.94 dB from 4.4 to 5.0 GHz, with noise figures of 1.57 dB and 1.73 dB, respectively. The input and output matching networks were also integrated, and the power consumption was designed to be 9.95 mA at a supply voltage of 1.2 V.

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A 40nm CMOS Ultra-Wideband Low Noise Amplifier Design

Cited by 4 publications

References 1 publication

Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology

Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology

An S-band MMIC LNA in GaAs 0.15-μm pHEMT

RF-SOI Low-Noise Amplifier Using RC Feedback and Series Inductive-Peaking Techniques for 5G New Radio Application

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