A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier

Ingram, D. L.; Chen, Y.C.; Kraus, Johannes; Brunner, Bernhard; Allen, B.; Yen, H.C.; Lau, K.F.

doi:10.1109/rfic.1999.805247

Cited by 43 publications

(6 citation statements)

References 13 publications

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“…As compared to GaAs, InP technologies generally provide slightly lower output power, but at higher efficiency. 20% PAE with an associated 26.3 dBm output power recorded in [164] is among the highest power reported to date using InP processes at W-band. Furthermore, using a 0.1-µm HEMT process, a finite-ground coplanar waveguide design, which is shown in Fig.…”

Section: W-band (75-110 Ghz)mentioning

confidence: 76%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: W-band (75-110 Ghz)mentioning

confidence: 76%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…Additional results for MMIC and S-MMIC power amplifiers include those for GaAs PHEMTs [80], [81], InP HEMTs [38], [82]- [86], and mHEMT power amplifiers [87]- [89]. For an excellent comparison with other electronic THz sources, such as HEMT and HBT oscillators, Schottky diode multipliers and active two-terminal devices, see [90].…”

Section: Solid-state Power Amplifiers For the Thz Regimementioning

confidence: 99%

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

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Abstract-We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.

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“…Fifty micron thick substrate, 0.1 micron gate length InGaAs/AlGaAs high electron mobility transistor (HEMT) technology has now yielded state-of-the-art MMIC power amplifiers at W-band that have output power as high as 0.35W [13]. Use of InP promises [14] even more efficiency, though currently the GaAs technology has been baselined for FIRST. Use of power amplifiers in a LU chain, however, raises questions about the noise contribution from the amplifier to the receiver through the LU.…”

Section: State-of-the Art Gaas-based Power Amplifiersmentioning

confidence: 99%

Development of millimeter- and submillimeter-wave local oscillator circuits for a space telescope

et al. 1999

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FIRST (Far InfraRed and Submillimetre Telescope) is a European science mission that will perform photometry and spectroscopy in the 80-670 tm range. The proposed heterodyne instrument for FIRST is a seven-channel receiver, which combines the high spectral resolving capability (O.3-300km/s) of the radio heterodyne technique with the low noise detection offered by Superconductor-Insulator-Superconductor (515) and Hot Electron Bolometer (HEB) mixers. It is designed to provide almost continuous frequency coverage from 480-2700 GHz. The Jet Propulsion Laboratory is responsible for developing and implementing the local oscillator sources for the 1200-2700 GHz mixers. The present state-of-the-art approach for millimeter-wave multipliers, based on waveguide blocks and discretely mounted devices, becomes harder and harder to implement as the frequency range is extended beyond 300 GHz. This talk will focus on the technology that is being developed to enhance and extend planar integrated Schottky devices and circuits to meet mission local oscillator requirements. The baseline approach is to use GaAs power amplifiers from 7 1 to 1 15 GHz followed by a series of planar Schottky diode varactor multiplier stages to generate the required LO signal. The circuits have to be robust, relatively easy to assemble, and must provide broad fix-tuned bandwidth. A number of new technology initiatives being implemented to achieve these goals will be discussed. Approaches include quartz-based and substrate-less diode circuitry and integrated GaAs membrane technology. Recent results and progress-to-date will be presented.

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A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier

Cited by 43 publications

References 13 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Development of millimeter- and submillimeter-wave local oscillator circuits for a space telescope

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