No abstract

Presented is the development of two >2W W-band solid-state monolithic microwave integrated circuit (MMIC) power amplifier modules using TRW's advanced GaAs-and InPbased HEMT MMICs. The GaAs HEMT version delivers a record power of 2.4 W at 8.2% power-added efficiency with an associated gain of 12 dB at CW condition. The InP HEMT version delivers a compatible power of 2.24W at 9.9% PAE with much higher associated gain of 19.5 dJ3. These are the highest recorded Wband power module using solid-state MMIC technology. The measured results clearly show that InP HEMT technology, though operating at a lower drain voltage (2.5 -3V) than GaAs HEMT device (typically 3.5 -4V), offers a better power-efficiency combination at much higher associated gain than its GaAs counterpart at millimeter-wave frequency. The overall module only weighs 10 oz. in a volume of < 4 in3. This is the smallest 2.4-watt W-band highpower module to date,

No abstract

No abstract

No abstract