A 440–540-GHz Subharmonic Mixer in 130-nm SiGe BiCMOS

Guner, Alper; Mausolf, Thomas; Wessel, Jan; Kissinger, Dietmar; Schmalz, K.

doi:10.1109/lmwc.2020.3030315

Cited by 18 publications

(14 citation statements)

References 10 publications

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“…In the lower branch the frequencydoubled LO signal is then applied through a Marchand balun to the 240 GHz mixer, [31], [32], which is connected to the differential bowtie-antenna for the lower frequency band. In the upper branch the frequency-doubled LO signal is connected to the 480 GHz single-balanced subharmonic mixer [28], being directly connected to the differential bowtieantenna for the upper frequency band.…”

Section: A Transmitter For Two Frequency Bandsmentioning

confidence: 99%

“…The 480 GHz subharmonic mixer was measured within the RF range of 450-500 GHz using a Marchand balun for the differential RF input [28]. The NF measurement was performed with the gain method by measuring the IF output noise floor [28]. The measured conversion loss is 8.5 dB and the measured NF is 33 dB at 480 GHz for −1 dBm of LO-power.…”

Section: B Receiver For Two Frequency Bandsmentioning

confidence: 99%

“…It uses four identical multiplier chains with two frequency doubling stages. Further, a subharmonic mixer (SHM) in 0.13μm SiGe BiCMOS was reported with measured results for the range 450-500 GHz, which uses a single-balanced topology [28].…”

Section: Introductionmentioning

confidence: 99%

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Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

et al. 2022

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This paper presents a transmitter (TX) and a receiver (RX) with a cross-polarized bowtieantenna on a silicon lens for gas spectroscopy at 222-270 GHz and the doubled frequency at 444-540 GHz. TX and RX are fabricated in 0.13 μm SiGe BiCMOS technology. Both use two integrated local oscillators for frequency subbands 222-256 GHz and 250-270 GHz, which allow operating in one branch of the TX and RX at 222-270 GHz and in a second branch of the TX and RX at 444-540 GHz by frequency doubling. The directivity of the cross-polarized bowtie-antenna of the TX and RX is optimized for these two frequency bands with an estimated value of 24.4 dBi at 260 GHz, and 29.5 dBi at 520 GHz. Absorption spectroscopy of gaseous methanol is used as a measure for the performance of the TX and RX in the lower and upper frequency bands.

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Section: A Transmitter For Two Frequency Bandsmentioning

confidence: 99%

Section: B Receiver For Two Frequency Bandsmentioning

confidence: 99%

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Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

et al. 2022

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“…In principle, this allows the design of SiGe systems even above 300 GHz, but the main shortcoming is the possibility to generate gain and output power at these frequencies. Commonly used approaches use frequency multipliers driven by power amplifiers [105] or implement subharmonic mixers [175]. A more efficient but narrowband approach is the direct combination of a subharmonic oscillator with a doubler or push-push operation [109].…”

Section: A Thz Performancementioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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“…However, the integration level is still not suitable for size-constraint applications, especially for THz complex system. Then, to decrease the size, integrated circuit mixers and down-converters based on CMOS [9]- [15] and SiGe [16]- [21] technologies are introduced. In these technologies, the operation frequency of mixer is usually higher than the cutoff frequency of devices.…”

Section: Introductionmentioning

confidence: 99%

An 820-GHz Down-Converter With Fourth Subharmonic Mixer in 40-nm CMOS Technology

Zhou

Luo

2021

IEEE Microw. Wireless Compon. Lett.

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In this letter, an 820GHz down-converter based on subharmonic mixer and low noise amplifier (LNA) with low conversion loss and noise figure is proposed. To reduce the frequency of local oscillation (LO) signal, a 4 th subharmonic architecture is adopted for the mixer implementation. Meanwhile, to improve the isolation of the mixer, a low-loss matching network based on λ/4 resonators with ground shields is introduced in the terahertz (THz) signal path. Then, the 4-stage common-source LNA is utilized to amplify the down-conversion IF signal. Using a conventional 40-nm CMOS technology, the implemented THz down-converter exhibits 9.9dB conversion loss and 39.2dB noise figure with -6dBm LO input power at 820GHz. The core chip only occupies 0.74×0.25 mm 2 , while dissipating 28.6mW from 1.1V voltage supply.

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A 440–540-GHz Subharmonic Mixer in 130-nm SiGe BiCMOS

Cited by 18 publications

References 10 publications

Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

An 820-GHz Down-Converter With Fourth Subharmonic Mixer in 40-nm CMOS Technology

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