A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy

Fischer, S.E.; Cook, Robert E.; Knepper, R.W.; Lange, R.C.; Nummy, Karen; Ahlgren, D.; Revitz, M.; Meyerson, B.S.

doi:10.1109/iedm.1989.74197

Cited by 12 publications

(4 citation statements)

References 2 publications

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“…In Ref. [8], 65 nm thick graded SiGe base with xGe up to 11% was used instead of Si, which showed a 10X collector current enhancement and a 30% reduction in base transit time to 2.6 ps. These SiGe HBTs have peak fT of 45 GHz in comparison with 38 GHz of the Si counterparts.…”

Section: Interdiffusion Impacts On Device Performancementioning

confidence: 99%

“…In the past three decades, due to the compatibility with the mainstream Si processing and the capability of energy bandgap/band structure, mobility, strain, and diffusion engineering, SiGe, SiGe:C, and Ge have been commercially and widely used in electronic and optoelectronic devices ( Fig. 1) such as MOSFETs [27][28][29][30], tunnel field-effect transistors (TFETs) [31,32], SiGe:C heterojunction bipolar transistors (HBTs) [8,9,[33][34][35][36], photodetectors [37][38][39], modulators [40][41][42], and waveguides [43][44][45]. Besides these industry applications, many SiGe devices have been under extensive research such as SiGe nanowires transistors [46], Si and Ge nanocrystals thin film transistors and light emitters [47,48], Ge quantum dots lasers [49], Ge quantum dot photodetectors [50], GeSn lasers [21,51], Ge lasers [52][53][54][55][56][57][58][59], SiGeSn light emitting diodes (LEDs) and photodetectors [58,59].…”

Section: Applicationsmentioning

confidence: 99%

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Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Xia

2019

Science Bulletin

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Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion happens that are generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion. However, Si-Ge interdiffusion behaviors have not been well understood until recent years. Much less studies are available for GeSn. This review starts with basic properties and the applications of major group IV semiconductors, and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors. Theories, experimental methods, design and practical considerations are discussed together with the key findings in this field.

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Section: Interdiffusion Impacts On Device Performancementioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Xia

2019

Science Bulletin

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“…Plenty of experimental results have been presented on the issues regarding integration of LTE SiGe layers for different applications; [9][10][11][12] meanwhile, remarkably fewer reports are available about the modeling of the epitaxy process. [13][14][15] Another important point is that at low temperatures (below 600 • C), the traditional precursors e.g.…”

mentioning

confidence: 99%

Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane

Kolahdouz¹,

Salemi²,

Moeen³

et al. 2012

J. Electrochem. Soc.

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Low temperature epitaxy (LTE) in Chemical Vapor Deposition (CVD) refers to 350-650 • C interval. This temperature range is critical for this process since the thermal and lattice mismatch (or strain relaxation) issues diminish in advanced BiCMOS processing. The modeling of the epitaxy process is a vital task to increase the understanding the growth process and to design any desired device structure. In this study, an empirical model for Si 2 H 6 /Ge 2 H 6 -based LTE of SiGe is developed and compared with experimental work. The model can predict the number of free sites on Si surface, growth rate of Si and SiGe, and the Ge content at low temperatures. A good agreement between the model and the experimental data is obtained.

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“…Recently, HBT's which have strained SiGe base layers were rep0rted.O) (4) ( 5 ) ( 6 ) In this paper, the first realization of a high performance CRYO-BiCMOS with Si/SiGe HBT's is described. CRYO-BiCMOS circuits achieve high speed switching characteristics and driving capability over CMOS circuits at scaled supply voltages.…”

Section: Introductionmentioning

confidence: 99%

A CRYO-BiCMOS technology with Si/SiGe heterojunction bipolar transistors

Imai

Yamazaki

Tashiro

et al.

Proceedings on Bipolar Circuits and Technology Meeting

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A high performance liquid-nitrogen (LN2) temperature BiCMOS (CRYO-BiCMOS) technology with Si/SiGe heterojunction bipolar transistors (HBT's) is presented. The newly developed HBT, which has an "n+ -polysilicon/n-type Si epitaxial layer" emitter structure on a p-type SiGe base layer, shows a high current gain of 50 at LN2 temperature. Under the conditions of 3.3V and 83K, the driving capability of CRYO-BiCMOS gates is two times larger than that of CRYO-CMOS gate. The CRYO-BiCMOS with Si/SiGe HBT's presented here is very promising for the future progress of BiCMOS LSI's.

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A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy

Cited by 12 publications

References 2 publications

Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane

A CRYO-BiCMOS technology with Si/SiGe heterojunction bipolar transistors

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