A ±4A high-side current sensor with 25V input CM range and 0.9% gain error from −40°C to 85°C using an analog temperature compensation technique

Xu, Long; Huijsing, Johan H.; Makinwa, Kofi A. A.

doi:10.1109/isscc.2018.8310315

Cited by 10 publications

(10 citation statements)

References 4 publications

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“…The performance of the sensor is summarized in Table I. Among high-side current sensors [4]- [5], this design achieves the best accuracy. Compared to [3], it achieves similar accuracy, 3x better power-efficiency and 30x wider ICMR, by using a beyond-the-rails ADC and a hybrid TCS.…”

Section: Resultsmentioning

confidence: 99%

“…In this design, instead of a bandgap reference, a proportional-toabsolute-temperature (PTAT) voltage VPTAT is employed as the ADC's reference [4]. Since the shunt resistance's temperature dependency is also roughly PTAT, it is effectively compensated by the TC of VPTAT, thus realizing an analog TCS.…”

Section: Hybrid Analog/digital Temperature Compensation Schemementioning

confidence: 99%

“…For rapid prototyping, a PCB trace is used to emulate the leadframe shunt used in [3]. Compared to an on-chip metal shunt [4], it enables a ±12A current sensing range with no extra silicon area cost, which is 3x wider than [4]. Good thermal coupling and galvanic isolation are achieved by directly bonding the chip to the trace with non-conductive glue.…”

Section: Introductionmentioning

confidence: 99%

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A ± 12-A High-Side Current Sensor With 25 V Input CM Range and 0.35% Gain Error From −40 °C to 85 °C

Shalmany

Huijsing

et al. 2018

IEEE Solid-State Circuits Lett.

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This paper presents the most accurate shunt-based high-side current sensor ever reported. It achieves a 25V input common-mode range from a single 1.8V supply by using a beyond-the-rails ADC. A hybrid analog/digital temperature compensation scheme is proposed to simplify the circuit implementation while maintaining the state-of-the-art accuracy. Over a ±12A current range, the sensor exhibits 0.35% gain error from-40°C to 85°C with 3x better power efficiency.

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Section: Resultsmentioning

confidence: 99%

Section: Hybrid Analog/digital Temperature Compensation Schemementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A ± 12-A High-Side Current Sensor With 25 V Input CM Range and 0.35% Gain Error From −40 °C to 85 °C

Shalmany

Huijsing

et al. 2018

IEEE Solid-State Circuits Lett.

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“…2), which leads to increased complexity and power consumption. In this paper, a fully integrated high-side current sensor [10] is presented that supports a 25-V ICMR while operating from a single 1.5-V supply. A beyond-the-rails ADC is used to directly digitize the shunt voltage, thus obviating the need for HV IAs.…”

Section: Introductionmentioning

confidence: 99%

A ±4-A High-Side Current Sensor With 0.9% Gain Error From −40 °C to 85 °C Using an Analog Temperature Compensation Technique

Huijsing

Makinwa

2018

IEEE J. Solid-State Circuits

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This paper presents a fully integrated shunt-based current sensor that supports a 25-V input common-mode range while operating from a single 1.5-V supply. It uses a highvoltage beyond-the-rails ADC to directly digitize the voltage across an on-chip shunt resistor. To compensate for the shunt's large temperature coefficient of resistance (∼0.335%/°C), the ADC employs a proportional-to-absolute-temperature voltage reference. This analog compensation scheme obviates the need for the explicit temperature sensor and calibration logic required by digital compensation schemes. The sensor achieves 1.5-μV rms noise over a 2-ms conversion time while drawing only 10.9 μA from a 1.5-V supply. Over a ±4-A range, and after a one-point trim, the sensor exhibits a 0.9% (maximum) gain error from −40°C to 85°C and a 0.05% gain error at room temperature.

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“…However, the bias current is so sensitive to the supply voltage and resistor that the temperature coefficient (TC) rises linearly with the temperature. The advanced scheme employs a bandgap (BG) to generate a proportional-to-absolute-temperature (PTAT) current [7,8]. In order to make the PTAT current independent from temperature, an Op-amp is added to match the voltages of two branches in BG.…”

mentioning

confidence: 99%

A bias circuit for the thermal stability of GaAs HBT power amplifier

et al. 2021

Electronics Letters

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This letter proposes a current bias circuit that improves the thermal stability of the 5G power amplifier (PA) in the GaAs HBT process. A diode and resistor scheme combined with a diode-connected HBTs scheme are employed to generate temperature-related voltages of which the temperature coefficients (TC) are inversely proportional to the sizes of devices. Those multi-TC voltages are able to compensate for the equalbut-opposite TC of HBTs in the current mirrors so as to generate different zero-to-absolute-temperature (ZTAT) currents at the same time. The experimental results show that the TC of the proposed bias circuit has 4% error for a 5.5 V supply from -5 to 95°C. Compared with the traditional bias circuit, the variation of output power of the proposed bias circuit is reduced from 11% to 8% and the variation of PAE is reduced from 7% to 5%. The proposed bias circuit, which has no requirement for matching, can perform effective temperature compensation for PAs in the single-transistor GaAs HBT process.

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A ±4A high-side current sensor with 25V input CM range and 0.9% gain error from −40°C to 85°C using an analog temperature compensation technique

Cited by 10 publications

References 4 publications

A ± 12-A High-Side Current Sensor With 25 V Input CM Range and 0.35% Gain Error From −40 °C to 85 °C

A ± 12-A High-Side Current Sensor With 25 V Input CM Range and 0.35% Gain Error From −40 °C to 85 °C

A ±4-A High-Side Current Sensor With 0.9% Gain Error From −40 °C to 85 °C Using an Analog Temperature Compensation Technique

A bias circuit for the thermal stability of GaAs HBT power amplifier

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