2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) 2019
DOI: 10.1109/edssc.2019.8754128
|View full text |Cite
|
Sign up to set email alerts
|

A 5/10 Gb/s Dual-Mode NRZ/PAM4 CDR in 65-nm CMOS

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
1
1
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 4 publications
0
1
0
Order By: Relevance
“…The resulting characteristic is shown in column (d). And finally for the case of 3-level crossings, the 4 possible net outputs are now: three times early, 5 There are 6 possible 1-level transitions, 4 possible 2-level transitions and 2 possible 3-level transitions one time early, one time late and three times late. The resulting characteristic is shown in column (e).…”
Section: Scenario (Vi): No 2-level Transition Elimination and Addimentioning
confidence: 99%
“…The resulting characteristic is shown in column (d). And finally for the case of 3-level crossings, the 4 possible net outputs are now: three times early, 5 There are 6 possible 1-level transitions, 4 possible 2-level transitions and 2 possible 3-level transitions one time early, one time late and three times late. The resulting characteristic is shown in column (e).…”
Section: Scenario (Vi): No 2-level Transition Elimination and Addimentioning
confidence: 99%