A 5-Gb/s Radiation-Tolerant CMOS Optical Receiver

Menouni, M.; Xi, Tianzuo; Gui, Ping; Moreira, P.

doi:10.1109/tns.2013.2264477

Cited by 4 publications

(5 citation statements)

References 9 publications

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“…17 shows the measured jitter of the proposed TIA. The proposed TIA output jitter is smaller than the result of [6,7]. The proposed output jitter is 13.875 ps (0.04 UI) at the data rate of 6 Gb/s.…”

Section: Resultsmentioning

confidence: 68%

“…The power consumption per channel is 47.64 mW from the supply voltage of 1.2 V. The bandwidth can be enhanced with the small power consumption since the parasitic capacitances of the 1.2 V MOSFET devices are smaller than those of the 3.3 V MOSFET devices. The total gain of the TIA Core, SDC, 3-stage LA, and Output Buffer is 98.1 dBΩ, which is larger than that given in [4][5][6][7]. Also, the proposed TIA can get variable gain.…”

Section: Resultsmentioning

confidence: 80%

“…The goal of this work is to integrate the 4-channel TIAs in the 0.13 mm CMOS process. Thus, the die area per channel is smaller than that given in [6,7] that can support only one channel. The power consumption per channel is 47.64 mW from the supply voltage of 1.2 V. The bandwidth can be enhanced with the small power consumption since the parasitic capacitances of the 1.2 V MOSFET devices are smaller than those of the 3.3 V MOSFET devices.…”

Section: Resultsmentioning

confidence: 90%

“…The proposed output jitter is 13.875 ps (0.04 UI) at the data rate of 6 Gb/s. The data Jitter of [7] is 50.3 ps (0.14 UI) at 5.5 Gb/s and that of [6] is 0.55 UI at 5 Gb/s. Fig.…”

Section: Resultsmentioning

confidence: 99%

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A 6 Gb/s Low Power Transimpedance Amplifier with Inductor Peaking and Gain Control for 4-channel Passive Optical Network in 0.13 μm CMOS

Lee¹,

Park²,

Kim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-This paper presents a 6 Gb/s 4-channel arrayed transimpedance amplifiers (TIA) with the gain control for 4-channel passive optical network in 0.13 mm complementary metal oxide semiconductor (CMOS) technology. A regulated cascode input stage and inductive-series peaking are proposed in order to increase the bandwidth. Also, a variable gain control is implemented to provide flexibility to the overall system. The TIA has a maximum 98.1 dBΩ gain and an input current noise level of about 37.8 pA/Hz. The die area of the fabricated TIA is 1.9 mm x 2.2 mm for 4-channel. The power dissipation is 47.64 mW/1ch.

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Section: Resultsmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 90%

“…The proposed output jitter is 13.875 ps (0.04 UI) at the data rate of 6 Gb/s. The data Jitter of [7] is 50.3 ps (0.14 UI) at 5.5 Gb/s and that of [6] is 0.55 UI at 5 Gb/s. Fig.…”

Section: Resultsmentioning

confidence: 99%

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A 6 Gb/s Low Power Transimpedance Amplifier with Inductor Peaking and Gain Control for 4-channel Passive Optical Network in 0.13 μm CMOS

Lee¹,

Park²,

Kim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…Two of each versions were tested in the temperature test chamber, and the worst case results are presented in figures 9a and 9b. In addition to the photodiode the ROSA package also includes the GigaBit Transimpedance Amplifier (GBTIA) [6].…”

Section: Receiver Sensitivitymentioning

confidence: 99%

Temperature characterization of versatile transceivers

Olanterä¹,

Détraz²,

Storey³

et al. 2013

J. Inst.

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The Versatile Transceiver is a part of the Versatile Link project, which is developing optical link architectures and components for future HL-LHC experiments. While having considerable size and weight constraints, Versatile Transceivers must work under severe environmental conditions. One such environmental parameter is the temperature: the operating temperature range is specified to be from −30 to +60 • C. In this contribution we present the results of the temperature characterization of the VTRx transmitter and receiver. Several transmitter candidates from three different manufacturers have been characterized: multi-mode Vertical Cavity Surface-Emitting Lasers and a single-mode Edge-Emitter Laser. Also both single-and multi-mode receivers have been tested.

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