Optical data transmission will remain a key enabling technology for the upgrading detectors at HL-LHC. In particular the inner tracking detectors will require low-mass, radiation tolerant optical transmit and receive modules for tight integration in the detector front-ends. We describe the development of such a module, giving details of the design, functional and environmental performance, as well as showing the feasibility of achieving small size, low-mass, and low-power operation.

The Versatile Link PLUS project targets the phase II upgrades of the ATLAS and CMS experiments. It will develop a radiation resistant optical link, operating at up to 10 Gb/s in the upstream and up to 5 Gb/s in the downstream directions with a smaller footprint and higher channel count than its predecessor. A low-profile package is being developed that allows volume production at reduced costs, but which nevertheless can be configured to suit the individual channel count needs of different detectors. This paper describes the development strategies and summarizes the status of the feasibility demonstration phase of the project.

Radiation-hard optical links are the backbone of read-out systems in high-energy physics (HEP) experiments at CERN. The optical components must withstand large doses of radiation and strong magnetic fields and provide high data rates. Radiation hardness is one of the requirements that become more demanding with every new generation of HEP experiment. Previous studies have shown that vertical cavity surface emitting lasers, on which the current optical links are based, will not be able to withstand the expected radiation levels in the innermost regions of future HEP experiments. Silicon photonics (SiPh) is currently being investigated as a promising alternative technology to address this challenge. We irradiated SiPh Mach-Zehnder modulators (MZMs) with different design parameters to evaluate their resistance against ionizing radiation. We confirm that SiPh MZMs with a conventional design do not show a phase shift degradation when exposed to a 20-MeV neutron fluence of 3 • 10 16 n/cm 2. We further demonstrate that custom-designed MZMs with shallow etch optical waveguides and high doping concentrations in their p-n junctions exhibit a strongly improved radiation hardness over devices with a conventional design when irradiated with X-rays. We also found that MZMs withstood higher radiation levels when they were irradiated at a low temperature. In contrast, larger reverse biases during irradiation led to a faster device degradation. Simulations indicate that a pinch-off of holes is responsible for the device degradation. Photodiodes (PDs) were also tested for their radiation hardness as they are needed in silicon photonic transceivers. X-ray irradiation of building-block germanium-silicon PDs showed that they were not significantly affected.

Detectors involved in the upgrade programme of the LHC will need high-speed optical links to transfer readout and control data. The link front-end will be based on a radiation tolerant opto-electronic module, the Versatile Transceiver (VTRx), developed under the Versatile Link project. In this contribution we present a test system and protocol to be used to verify the compliance of the VTRx modules to the specifications, and a Versatile Link demonstrator based on the VTRx and the Gigabit Link Interface Board. Finally, we introduce the Small Footprint VTRx which is being designed for the CMS Tracker upgrade.

High-speed Mach-Zehnder interferometer silicon modulators were irradiated with neutrons and X-rays in two separate radiation tests. The devices were exposed to a total fluence of neutrons/cm and a total ionizing dose of 1.3 MGy; levels comparable to the worst radiation levels for a tracking detector after 10 years of operation at the High-Luminosity LHC. Our measurements indicate that the devices' performance does not significantly degrade after exposure to nonionizing radiation and begins to be affected by ionizing radiation after a dose of a few hundred kGy; the phase-shift for an applied reverse bias of 1 V is 10% of its preirradiated value after 600 kGy of received ionizing dose.Index Terms-High-luminosity LHC (HL-LHC), optoelectronics, radiation damage, silicon photonics, total ionizing dose (TID).