A 5 to 27 GHz MMIC power amplifier

Jeon, Kun-Rok; Lee, Jae-Hak; Paek, Seung-Won; Kim, Dong-Wook; Lee, Won-Sang; Lim, Chae-Rok; Cha, Ho-Young; Choi, Hyung-Kyu; Chung, Ki-Woong

doi:10.1109/mwsym.2000.861113

Cited by 4 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A comparison of Si, GaAs, and SiC MESFET power densities indicates that SiC is a very promising material for high-power and high-frequency operation [10]. A serious problem of wide-band PAs, especially in the GaAs fieldeffect transistor (FET) and GaAs monolithic-microwave integrated-circuit (MMIC) cases [11], [12] is the output matching because of the low intrinsic device impedance. Depending on the amplifier data, this problem can be mostly overcame only by using (external) transmission-line transformers that strongly limit the total bandwidth.…”

Section: Introductionmentioning

confidence: 99%

Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Sayed

Boeck

2005

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

This paper describes a two-stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. An SiC MESFET is used as the power stage. A large-signal table-based model has been developed and verified for the SiC device by comparison with measurements. A novel broad-band choke structure was developed to obtain high dc isolation and low RF loss over the full bandwidth. No impedance transformer was used at all. Broad-band input and output matching networks and shunt feedback topology were introduced to fulfill the bandwidth requirements. Typical values of 22-dB power gain, 37-dBm output power, 28% power-added efficiency, and 47-dBm third-order intercept points have been achieved in a two-stage design using a GaAs MESFET as driver stage. All power and linearity results were obtained over the whole frequency band. The design procedure is given in detail and the results are being discussed and compared with simulations.

show abstract

Section: Introductionmentioning

confidence: 99%

Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Sayed

Boeck

2005

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…A comparison of Si, GaAs, and SiC MESFET power densities indicates that SiC is a very promising material for high power and high frequency operation [1]. A serious problem of compound semiconductor power amplifiers, especially in GaAs FET and GaAs monolithic microwave integrated circuit (MMIC) cases [2,3] is the output matching because of the low intrinsic device impedance. Depending on the amplifier data, this problem can be mostly overcome only by using transmission line transformers that strongly limit the total bandwidth.…”

mentioning

confidence: 99%

A 5.15–5.35 GHz band 10 W power amplifier using SiC MESFETs

Kim

Burm

2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

A 10 watt radio frequency power amplifier using commercially available silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs), Cree CRF‐24010F, was designed. The frequency range covers 5.15 GHz to 5.35 GHz for using IEEE 802.11a Wireless Local Area Network (WLAN) applications. The 2nd and 3rd order harmonics cancellation technique was introduced to obtain high linearity. A cascade topology was employed to increase small signal gain, isolation, and stability throughout the bandwidth. At VDS1 = VDS2 = 48 V and IDS1 + IDS2 = 871 mA, 11 ± 1 dB power gain, 40 dBm (10 W) output power and 32.5% power added efficiency (PAE) over the operating bandwidth have been achieved in the two stage design. Two‐tone simulation at frequency spacing of 10 MHz was also done and output 3rd order intercept point (OIP3) of 49 dBm was obtained. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Ultra-wideband low-cost phased-array radars

Rodenbeck

Kim

et al. 2005

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

A 5 to 27 GHz MMIC power amplifier

Cited by 4 publications

References 1 publication

Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

A 5.15–5.35 GHz band 10 W power amplifier using SiC MESFETs

Ultra-wideband low-cost phased-array radars

Contact Info

Product

Resources

About