A 5-V-Program 1-V-Sense Anti-Fuse Technology Featuring On-Demand Sense and Integrated Power Delivery in a 22-nm Ultra Low Power FinFET Process

Kulkarni, S.; Ikram, Umaira; Bhatt, Kedar; Chao, Yu-Lin; Chang, Yao‐Feng; Jenkins, Ian; Murari, Venkatesh; Thambithurai, David; Hasan, Mohammad; Li, Jiabo; Paulson, L.; Sell, B.; Bhattacharya, U.; Zhang, Ying

doi:10.1109/lssc.2020.3041236

Cited by 6 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The LRS/via-fusing resistance ratio is at least ∼10 8 at 0.1 V (similar resistance ratio with anti-fuse or conventional metal-fuse). 43 Noted the device went to high currents during the higher RESET voltage sweep is classified as the "dielectric breakdown (DB)," which is the irreversible LRS. Figure 4a shows the yield in three operations for OTP memory on the self-selective memory as a function of temperature (298 K-423 K).…”

Section: Resultsmentioning

confidence: 99%

Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Chen¹,

Huang²,

Lee³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

A dual-function memory with complementary metal oxide semiconductor (CMOS) compatibility is presented with the feasibility of future embedded applications. The self-selective memory composed of bilayer oxide stacks is presented with the immunity of sneak-path current and improved thermal stability for the high storage class memory array application. Meanwhile, the one-time programmable memory is realized by the identical bilayer structure which has improved the yield of dielectric-fuse phenomena by increasing the operating temperature up to 423 K. The physical mechanisms and modeling are investigated with experimental and simulated results. Our results provide pathfinding of high density, CMOS back-end-of-line integration capability, land ow power multi-functionality in the future embedded applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Chen¹,

Huang²,

Lee³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The LRS/fusing resistance ratio is at least ∼10 6 at 0.1 V (similar resistance ratio with A-F or metal-fuse). 1,2 Figure 2a shows the MIM via-fusing yield for five tested devices with various via areas. Yield is 100% for 0.16 μm 2 and decreasing with via area increasing (coefficient of determination, R-square: 0.74), which indicates that the area scaling can improve yield and is suitable for CMOS scaling trend.…”

Section: Resultsmentioning

confidence: 99%

“…While eFuse technology supports lower program voltages, AF technology has traditionally promised better density and security. 1,2 In addition, the emerging memristive technologies as called ReRAM (resistive random-access memory), have shown that both advanced CMOS node implementation (beyond 14 nm FeFET) and capability for multilevel cell (MLC) application (enabling the flexibility of weighting modulation as synaptic device) by precise electrical control of the filament growth. 3,4 This opens an opportunity for embedded memory and further applications, 5 e.g., neuromorphic computing, which takes inspiration from the high parallelism in the human brain, low power, high speed, and noise-tolerant computing capabilities.…”

mentioning

confidence: 99%

Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

Chen¹,

Chang²,

Lin³

et al. 2022

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 hours without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

show abstract

“…Polysilicon is utilized as the fuse element in prior CMOS technologies before utilizing the high-k metal gate in the front-end technology (Chen et al, 2017;Cheng et al, 2018;Doi et al, 2020;Chen et al, 2021). With high demands on computing configurations, the logic process-compatible non-volatile OTP utilizing the resistive memory is critical for recent applications, namely, security for data storage, security, Internet of Things, and modern system-on-chip (Kulkarni et al, 2021;Liu et al, 2018;Okuno et al, 2020;Shamsoshoara et al, 2020;Yang et al, 2020). This results in challenges, such as, increase in the fuse bit counts, overall area, large power consumption, and reliability.…”

Section: Introductionmentioning

confidence: 99%

Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

Chen

2021

Front. Nanotechnol.

View full text Add to dashboard Cite

A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).

show abstract

A 5-V-Program 1-V-Sense Anti-Fuse Technology Featuring On-Demand Sense and Integrated Power Delivery in a 22-nm Ultra Low Power FinFET Process

Cited by 6 publications

References 3 publications

Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Self-Selective Dielectric-Fuse Effect with Ambient Factors in Oxide-Based Memory

Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

Contact Info

Product

Resources

About