A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Abstract

The theoretical and experimental current–voltage characteristics of 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) are discussed. The manufactured 50-nm-gate-length n-type SB-MOSFET shows large on/off current ratio with low leakage current less than 10−4 μA/μm. The saturation current is 120 μA/μm when drain and gate voltage is 1 and 3 V, respectively. The experimental current–voltage characteristics of 50-nm-gate-length n-type SB-MOSFET are fitted using newly developed theoretical model. From the theoretical analysis, the off- and on-current is mainly attributed to the thermionic and tunneling current, respectively. The decrease of tunneling distance at silicon/silicide Schottky junction with the increase of drain voltage gives the increase of tunneling current. This phenomenon is explained by using drain-induced Schottky barrier thickness thinning effect.

Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation

“…In order to improve the performance of SB-MOSFETs, the carrier injection, which is determined by the Schottky barrier between the source and the channel, has to be improved. A reduction of the SB height can be achieved by Fermi level depinning with an insulator inserted between the metallic electrode and the semiconductor [4,5], low-SB silicides [6][7][8] as well as dopant segregation (DS) [2,3,9]. In this case, dopants piled-up at the silicide/silicon interface during DS form a thin highly doped layer which causes a strong band bending.…”

Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions

“…The SB S/D has numerous advantages; it is a simple low-temperature process (less than 500℃), and offers low parasitic S/D resistance and strong short-channel-effect immunity. Furthermore, it has inherent physical scalability to sub-100-nm gate lengths [5][6][7][8].…”

Performance Assessment of III–V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs

“…S CHOTTKY-barrier MOSFETs (SB-MOSFETs) have advantages over the conventional MOSFETs in terms of shallow-junction fabrication and doping issues among others [1], [2]. Despite their salient features, SB-MOSFETs have a major drawback of having low on-state current (I ON ) because tunneling current (I tunn ) dominates in the on-state [3], [4].…”