A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

Chao, Shih-Fong; Wang, Huei; Su, Chia-Yi; Chern, J.G.J.

doi:10.1109/lmwc.2006.890339

Cited by 84 publications

(27 citation statements)

References 12 publications

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“…Reducing the capacitance of a shunt NMOS transistor can improve the high-frequency performance for a www.ietdl.org travelling-wave switch design [6][7][8][9]. The capacitance can be decreased by dual-gate or cascode devices because of their stacked circuit topology.…”

Section: Small-signal Equivalent Modelmentioning

confidence: 99%

Broadband complementary metal‐oxide semiconductor single‐pole‐double‐throw switch with improved power handling capability using dual‐gate metal‐oxide semiconductor field‐effect transistors

Huang¹,

Hsin²

2015

IET Microwaves, Antennas & Propagation

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A broadband complementary metal-oxide semiconductor (CMOS) single-pole-double-throw (SPDT) switch based on a travelling-wave design with using dual-gate N-type metal-oxide semiconductor (NMOS) transistors is implemented in a 0.18 μm CMOS process for millimetre-wave applications. To further investigate the power handling capability in a dual-gate metal-oxide semiconductor field-effect transistor (MOSFET), this study analyses the mechanism of voltage swing distribution by using the proposed large-signal cascode model. Considering the parasitic gate-to-gate capacitance and the substrate effect, the simulations in this study can accurately predict the small-signal and power handling performances of the SPDT switch. The switch exhibits a measured 1 dB bandwidth of ∼51 GHz, ranging from 16 to 67 GHz with an insertion loss of 3.6 dB at 30 GHz. The measured isolation is also better than 22 dB. The measured power handling capability can achieve a 1 dB compression point at an input power of 23.8 dBm at 30 GHz with a negative body bias, and the simulation result shows a 1 dB compression point nearly 24 dBm. Based on the proposed model, the large-signal performances under different body biases can be significantly predicted when including the parasitic gate-to-gate capacitance in a dual-gate MOSFET.

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Section: Small-signal Equivalent Modelmentioning

confidence: 99%

Broadband complementary metal‐oxide semiconductor single‐pole‐double‐throw switch with improved power handling capability using dual‐gate metal‐oxide semiconductor field‐effect transistors

Huang¹,

Hsin²

2015

IET Microwaves, Antennas & Propagation

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“…MMW switches, which include SPST switches and SPDT switches [178][179][180][181][182][183][184], are essential for a MMW communication system. For a MMW switch, most important design considerations are low insertion loss and high isolation.…”

Section: Switch In Si-based Technologymentioning

confidence: 99%

“…Also, in [179], a 90 nm CMOS switch exploits traveling wave concept to exhibit a wideband performance in 50-94 GHz. It is worth mentioning that a filter-integrated switch concept is proposed with better sideband rejection for the undesired bands [185,186] in GaAs HEMTs.…”

Section: Switch In Si-based Technologymentioning

confidence: 99%

“…Circulator, which is a three ports component, is usually utilized to provide simultaneously transmit and receive signals without diplexer filters or RF switches [179,188,[190][191][192][193][194][195][196]. An active circulator has wider operation bandwidth, lower insertion loss and smaller area than a passive circulator.…”

Section: Circulator and Isolator In Si-based Technologymentioning

confidence: 99%

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Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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“…The same antenna is used for the transmitter and receiver such that the antenna transmits first and then receives the signal in a half-duplex manner. A single pole double throw (SPDT) switch is used for this purpose [17]. The first mixer down-converts the signal with a LO frequency of 60.7GHz.…”

Section: System Architecturementioning

confidence: 99%

Feasibility study of millimeter wave CMOS automotive pulse radars

Mahzabeen

Eliezer

Banerjee

2014

Texas Symposium on Wireless and Microwave Circuits and Systems

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The death toll and financial loss from automotive accidents necessitate the use of automotive radars. However, existing commercial automotive radars are bulky and expensive, and are therefore offered only in higher-end vehicles. The advancements in CMOS technology provide a great opportunity for it to be used in the 76-81 GHz frequency band allocated to automotive radar, thereby offering a lower-cost solution. This paper addresses some of the design challenges of millimeter wave CMOS transceivers from a system level perspective, proposes a radar system, and presents simulation results for key functions in the system that were obtained in AWR Visual System Simulator (VSS). The paper also discusses the options of built in self testability of CMOS transceivers thus envisioning a complete low cost solution for automotive radars.Index Terms-Built-in self-test, CMOS, long range radar, low noise amplifier, millimeter-wave, short range radar. I. TREND OF AUTOMOTIVE RADARS AND CMOSWhile III-V compounds dominated the millimeter wave (mm-wave) spectrum a decade ago, CMOS device technologies now have crept into this application arena. The advantages in cost and integration level of CMOS technology primarily drive this phenomena. 60GHz WPAN [1], 77-81GHz automotive radar [2], and 94 GHz imaging [3] are some examples of applications that span these frequencies with III-V technologies and CMOS technology [4].Until recently, most of the cars used long range radars only for automatic cruise control (ACC) [5]. Development of 24GHz short range pulse radar sensors enabled additional automotive applications. As a result, a complete automotive radar system has been deployed in high end cars, where a central processor reads all the data, and processes the information. Accordingly, the central processor sends a control signal to the appropriate sensor. Usually these cars are surrounded by up to 16 single, small, and powerful radar sensors to comprise a 360 0 safety shield around the car.With time, the size of the radar becomes smaller and the radar possesses more automotive radar applications. Figure 1 shows the progress of automotive radars with time [7]. In 1999, a first generation adaptive cruise control radar system Distronic was installed in Mercededs-Benz S-class vehicles. The third generation of this system is based on a silicon germanium (SiGe) monolithic microwave integrated circuit (MMIC) for the very first time; and was the smallest radar system when introduced, due to its package advantages [8]. Fig.

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A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

Cited by 84 publications

References 12 publications

Broadband complementary metal‐oxide semiconductor single‐pole‐double‐throw switch with improved power handling capability using dual‐gate metal‐oxide semiconductor field‐effect transistors

Broadband complementary metal‐oxide semiconductor single‐pole‐double‐throw switch with improved power handling capability using dual‐gate metal‐oxide semiconductor field‐effect transistors

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Feasibility study of millimeter wave CMOS automotive pulse radars

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