A fully integrated single-pole-double-throw transmit/ receive switch has been designed and fabricated in standard bulk 90-nm complementary metal-oxide semiconductor (CMOS) technology. Traveling wave concept was used to minimize the insertion loss at higher frequency and widen the operating bandwidth. The switch exhibits a measured insertion loss of 2.7 -dB, an input 1-dB compression point (input P 1 dB ) of 15 dBm, and a 29-dB isolation at the center frequency of 77 GHz. The total chip size is only 0.57 0.42 mm 2 including all testing pads. To our knowledge, this is the first CMOS switch demonstrated beyond 50 GHz, and the performances rival those monolithic microwave integrated circuit switches using standard GaAs PHEMTs.Index Terms-Complementary metal-oxide semiconductor (CMOS) integrated circuits, millimeter-wave switches, metal-oxide-semiconductor field-effect transistor (MOSFET) switches.

No abstract

No abstract

No abstract

A wideband SPDT switch in standard bulk 0.13µm CMOS process is demonstrated in this paper. In order to extend the operation frequency, the traveling-wave circuit topology is utilized. Due to the different requirements in the transmit and receive paths, the switch is designed to be asymmetric. In the receive path, the switch achieves a measured insertion loss less than 2.7 dB, a measured isolation better than 26 dB from 27 to 50 GHz. On the other hand, for the transmit path, the switch also achieves a measured insertion loss less than 4.4 dB, and an isolation better than 14 dB from 30 to 63 GHz. At 40 GHz, a measured input P 1dB of 13.8 dBm is attained. The chip size is only 0.8 x 0.5 mm 2 . The measured data agree with the simulation results well. To our knowledge, this work is the first CMOS switch in millimeter-wave frequency range.Index Terms -CMOS, SPDT switch, traveling wave.