2016
DOI: 10.1109/tthz.2015.2496421
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A 520–620-GHz Schottky Receiver Front-End for Planetary Science and Remote Sensing With 1070 K–1500 K DSB Noise Temperature at Room Temperature

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Cited by 75 publications
(48 citation statements)
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“…Thus, the broadband multiplier with high power becomes a key device, which replaces the amplifier to drive a next cascaded multiplier. Many efforts have been made on this issue so far . The practical limits of the output power of frequency multipliers are the conversion efficiency and power handling.…”
Section: Introductionmentioning
confidence: 99%
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“…Thus, the broadband multiplier with high power becomes a key device, which replaces the amplifier to drive a next cascaded multiplier. Many efforts have been made on this issue so far . The practical limits of the output power of frequency multipliers are the conversion efficiency and power handling.…”
Section: Introductionmentioning
confidence: 99%
“…A proven way to improve the power handling of multipliers is power‐combining multiplying structures using split and combined waveguide networks. Multiplying power‐combing structure can be realized by using Y‐junction waveguides, hybrid couplers, waveguide dividers or, spatial dividers and placing them in a single waveguide . An in‐phase power‐combined tripler at 265–300 GHz with 5%–15% efficiency was proposed in Ref.…”
Section: Introductionmentioning
confidence: 99%
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“…GaAs Schottky diodes are broadly used as the nonlinear elements in SHMs because of their low noise performance at room temperature [3,4]. The progress of device fabrication process and the emergence of planar GaAs Schottky diodes make devices' physical and geometrical structures stable and reliable.…”
Section: Introductionmentioning
confidence: 99%
“…This enables comprehensive insight into the high-frequency parasitic effects caused by the device geometry which exerts unneglectable influences on circuit performance [6,7], and thus results in effective design of high-performance circuits in THz band. By taking into account of numerical analysis results from the 3D EM modeling of the diode geometry, better agreement between the predictions and measurement results was achieved in [4,8] compared with the cases in [9, 10] which were based on conventional equivalent circuit modelling of the device geometry. Furthermore, one of the core issues in the SHM's design is the synthesis of the embedding network for the Schottky diodes.…”
Section: Introductionmentioning
confidence: 99%