A 6–18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling

Park, Hongjong; Nam, Hyosung; Choi, Kwangseok; Kim, Jeong Hyun; Kwon, Youngwoo

doi:10.1109/tmtt.2018.2817521

Cited by 40 publications

(10 citation statements)

References 18 publications

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“…Thermal management [119] and extracting reliable thermal models [120] are other important factors in circuit designs and chip-layout verification [121,122]. Figure 11 shows the simplified thermal model for a transistor that gate periphery of transistor depends on the operating drain voltage, and this consideration is so critical in designing circuits such as broadband amplifiers.…”

Section: Thermal Optimizationmentioning

confidence: 99%

Optimization techniques for analog and RF circuit designs: an overview

Kouhalvandi

Ceylan²,

Özoğuz

2020

Analog Integr Circ Sig Process

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Optimizations have gained much consideration from the researchers working in the domains of analog and radio frequency (RF), recently. Dealing with highly nonlinear behavior of active components and aiming to meet design specifications are common issues in all nonlinear circuit designs. As a consequence and accordingly, many studies have been conducted on diverse optimization methods and algorithms for tackling the design problems and meeting optimal solutions with high accuracy. The main purpose of this article is to provide a comprehensive and systematic literature review for the optimization approaches applied by the researchers for designing various analog and microwave circuits. We focus on considering the existing optimization methods from the newly published optimization methods in the last decade. Thus, this study can guide and enlighten complementary metal-oxide-semiconductor analog and RF microwave circuit designers to consider optimization methods commonly used in both areas and to expand conventional performance figures used in their area.

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Section: Thermal Optimizationmentioning

confidence: 99%

Optimization techniques for analog and RF circuit designs: an overview

Kouhalvandi

Ceylan²,

Özoğuz

2020

Analog Integr Circ Sig Process

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“…To ensure wide bandwidth, many amplifiers use distributed amplifiers [19,20,21], which spread out parasitic capacitors, thereby increasing the bandwidth of the amplifier, along with the deterioration of efficiency. Transformer is another way to achieve broadband [22,23,24], which uses magnetic coupling resonance to achieve the broadband, but for the amplifier with small output power it will bring more insertion loss.…”

Section: Introductionmentioning

confidence: 99%

A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

Sun

et al. 2022

IEICE Electron. Express

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This paper presents a compact 24-32 GHz high-linearity broadband, fully integrated amplifier which is designed in 130-nm SiGe (BiCMOS). The principle of improving the linearity of degeneration inductor and the effect of the driving stage on linearity are analyzed. To achieve flat broadband, the transformer is also used in the interstage matching. Output matching for low insertion loss networks has been selected carefully. The amplifier demonstrates a small signal gain of 11.3 dB range from 24GHz to 32GHz with a gain flatness of ±0.5dB. Measurements show a maximum power added efficiency (PAE) of 18.54% with output 1dB compression power for 7.6 dBm at 32GHz.

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“…However, the efficiency is limited by the inherent loss of the artificial transmission lines in the DA; thus, the PAE is ≥ 4% [1], 6% [2], or 10% (under pulse condition) [3]. Some modifications have been used to improve the DAs' gain and power [5], including the Cascode DA [6], the stacked DAs [7,8], conventional DA-cascaded single-stage DA [9], and RM DA [10,11]. The gains have been improved, with inherent BW advantages of 36-66 GHz [5], DC−40 GHz [6], 0.5-38 GHz [7], 60-145 GHz [8], 3.7-43.7 GHz [9] and 6-18 GHz [10].…”

Section: Introductionmentioning

confidence: 99%

Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

Chen

Luo³

et al. 2021

IET Microwaves Antenna & Prop

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A reactive matching (RM) power amplifier (PA) can achieve higher efficiency than a distributed amplifier (DA). In this paper, RM PAs that cover 18-40 GHz are proposed by using one-order and two-order synthesised transformer networks (STNs) with GaN on Si technology. In this band, the PAs can provide ≥30 dBm and ≥31.9 dBm output power, with power-added efficiency (PAE) of ≥17% and ≥15% in the continuous mode, respectively. Further, STNs are analysed using the transmission poles method (TPM) instead of the resonant frequency method (RFM). Thus, the limitations of output power and bandwidth are comprehensively derived. In the one-order STN, the impedance transformation ratio (T 1N ) has a maximum value (T MAX_1N ), limiting the output power. A two-order STN is proposed, and the impedance transformation ratio maximum (T MAX_2N ) can be improved to (T MAX_1N ) 2 . The result of this paper will be helpful for wideband high-power amplifier applications.

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A 6–18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling

Cited by 40 publications

References 18 publications

Optimization techniques for analog and RF circuit designs: an overview

Optimization techniques for analog and RF circuit designs: an overview

A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

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