A 60-GHz CMOS Transmit/Receive Switch

Ta, C.M.; Skafidas, Efstratios; Evans, R.J.

doi:10.1109/rfic.2007.380985

Cited by 43 publications

(23 citation statements)

References 4 publications

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“…MMW switches, which include SPST switches and SPDT switches [178][179][180][181][182][183][184], are essential for a MMW communication system. For a MMW switch, most important design considerations are low insertion loss and high isolation.…”

Section: Switch In Si-based Technologymentioning

confidence: 99%

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Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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Section: Switch In Si-based Technologymentioning

confidence: 99%

“…The transmission-line integrated switches are promising in MMW frequency due to good performances [180,183]. Also, in [179], a 90 nm CMOS switch exploits traveling wave concept to exhibit a wideband performance in 50-94 GHz.…”

Section: Switch In Si-based Technologymentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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“…However, in CMOS technology, the maximum unity current gain frequency f T is much lower than that of bipolar technology. Therefore, developing the transceiver working at 77 GHz in CMOS is very challenging [4]- [6]. In the receiver, the low noise amplifier (LNA) is typically the first block and its performance dominates the receiver's sensitivity [4], [5].…”

Section: Introductionmentioning

confidence: 99%

A 77 GHz CMOS low noise amplifier for automotive radar receiver

Duong

et al. 2012

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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This paper presents the design of a low noise amplifier (LNA) for automotive radar application operating at 76-77 GHz. The LNA consists of 5 cascade common source amplifiers. The output of each stage is positioned close to the gate of the next stage creating a LC resonance output load, therefore complex interstage matching networks are eliminated. Moreover, transmission lines (T Ls) are utilized to create matching and load inductors. As a result, chip size is significantly reduced. The proposed LNA is implemented in a 65 nm CMOS technology and measurement results show 11 dB voltage gain, and 7.8 dB noise figure (NF) while dissipating 21.5 mA from 1.2 V supply.

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“…This technology provides high performance, comparable to GaAs, and higher level integration of RF circuits with baseband digital circuitry at much lower price. In the literature, several single-ended T/R switches implemented in CMOS processes are reported [8][9][10][11][12][13][14][15][16][17][18][19]. A major challenge for next generation fully integrated SiGe BiCMOS T/R modules is to implement a high-performance CMOS T/R switch which can handle high transmit powers and provide high isolation as well as a low insertion loss (IL).…”

Section: Introductionmentioning

confidence: 99%

A fully integrated, highly linear CMOS T/R switch for X‐Band phased array radars

Dinç¹,

Zihir²,

Gürbüz³

2012

Circuit Theory & Apps

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This paper presents the design and implementation of a single-pole, double-throw transmit/receive (T/R) switch for X-Band (8-12 GHz) phased array radar applications. The T/R switch was fabricated in a 0.25-mm SiGe BiCMOS process and occupies 0.44-mm 2 chip area, including pads. The design focuses on the techniques, primarily, to achieve higher power handling capability (P 1dB ), along with higher isolation and better insertion loss (IL) of the T/R switch. These techniques include resistive-body floating, using on-chip impedance transformation networks and DC biasing of all terminals of the T/R switch. In addition, optimization of transistor widths and parallel resonance technique are used to improve IL and isolation, respectively. All these design techniques resulted in a measured IL of 3.6 dB, isolation of 34.8 dB and IP 1dB of 28.2 dBm at 10 GHz. The return losses at both input and output ports are better than 16 dB from 8 to 12 GHz. To our knowledge, this paper presents the single-ended CMOS T/R switch with the highest IP 1dB , competitive isolation and comparable IL at X-Band, compared to other reported works in the literature and attributed to the unique design methodologies and techniques.

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A 60-GHz CMOS Transmit/Receive Switch

Cited by 43 publications

References 4 publications

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

A 77 GHz CMOS low noise amplifier for automotive radar receiver

A fully integrated, highly linear CMOS T/R switch for X‐Band phased array radars

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