A 60 GHz MMIC stabilized frequency source composed of a 30 GHz DRO and a doubler

Time-domain measurements of the output waveforms of two 8-GHz high-efficiency power amplifiers, a 1-GHz frequency doubler, and a 5-GHz frequency doubler are presented in this paper. A new photoconductive probe has enabled nonintrusive time-domain voltage measurements, which confirm switched-mode class-E and class-F amplifier operation. In order to analyze nonlinear amplifiers designed to deliver a sinusoidal wave to the load, voltages at characteristic points inside the circuit need to be known. In multipliers, waveform measurements track harmonic leakage, expediting the design cycle. The highimpedance probe used here is an optoelectronic sampler, which can sense the charge on an exposed interconnect or the field associated with a buried interconnect. These electric-field data are then converted into voltage.

Section: Photoconductive Probing Of High-efficiency Doublersmentioning

confidence: 99%

Time-domain optical sampling of switched-mode microwave amplifiers and multipliers

Weiss

Crites

Bryerton

et al. 1999

“…The ability of FMCW radar systems to identify range and discriminate between targets is a direct function of the tuning linearity of the oscillator, which varies as a function of temperature. The temperature stability of an oscillator can be greatly improved by using a lower frequency source combined with a frequency multiplier [46]. The buffering that this technique provides between the oscillator and the antenna also helps to reduce frequency pulling.…”

Section: A Performance Issues Of Using Mmics As Frequency Sources Anmentioning

confidence: 99%

A compact manufacturable 76-77-GHz radar module for commercial ACC applications

Gresham

Jain

Budka

et al. 2001

129

The design and measured results of a single-substrate transceiver module suitable for 76-77-GHz pulsed-Doppler radar applications are presented. Emphasis on ease of manufacture and cost reduction of commercial millimeter-wave systems is employed throughout as a design parameter. The importance of using predictive modeling techniques in understanding the robustness of the circuit design is stressed. Manufacturing techniques that conform to standard high-volume assembly constraints have been used. The packaged transceiver module, including three waveguide ports and intermediate-frequency output, measures 20 mm 22 mm 8 mm. The circuit is implemented using discrete GaAs/AlGaAs pseudomorphic high electron mobility transistors (pHEMTs), GaAs Schottky diodes, and varactor diodes, as well as GaAs p-i-n and pHEMT monolithic microwave integrated circuits mounted on a low-cost 127-m-thick glass substrate. A novel microstrip-to-waveguide transition is described to transform the planar microstrip signal into the waveguide launch. The module is integrated with a quasi-optical antenna. The measured performance of both the component parts and the complete radar transceiver module is described.

“…The frequency multiplier provides the opportunity to evaluate not only the application, but also nonlinear models developed for the millimeter-wave SiGe HBT's. The majority of designs of active millimeter multipliers are based on FET devices as the nonlinear component [4]- [6]. A frequency multiplier for lower microwave frequencies using an AlInAs/GaInAs/InP HBT was recently presented, showing promising results [7].…”

Section: Introductionmentioning

confidence: 99%

Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier

Bruce

Rydberg

Kim

et al. 1998

In this paper, the design of an active millimeterwave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to fmax 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than 012 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its f max . Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids.